发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US15202749申请日： 2016-07-06
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公开(公告)号： US09508669B2公开(公告)日： 2016-11-29
- 发明人: Yasunari Umemoto , Daisuke Tokuda , Tsunekazu Saimei , Hiroaki Tokuya
- 申请人： MURATA MANUFACTURING CO., LTD.
- 申请人地址： JP Kyoto-Fu
- 专利权人： Murata Manufacturing Co., Ltd.
- 当前专利权人： Murata Manufacturing Co., Ltd.
- 当前专利权人地址： JP Kyoto-Fu
- 代理机构： Studebaker & Brackett PC
- 优先权： JP2014-003197 20140110
- 主分类号： H01L29/737
- IPC分类号： H01L29/737 ; H01L23/00 ; H01L29/66 ; H01L29/08
摘要：
A semiconductor device that includes a bipolar transistor, wherein a third opening, through which a pillar bump and a second wiring line, which is electrically connected to an emitter layer, contact each other, is shifted in a longitudinal direction of the emitter layer away from a position at which the third opening would be directly above the emitter layer. The third opening is arranged, with respect to the emitter layer, such that an end portion of the emitter layer in the longitudinal direction of the emitter layer and the edge of the opening of the third opening are substantially aligned with each other.
公开/授权文献
- US20160315060A1 SEMICONDUCTOR DEVICE 公开/授权日：2016-10-27
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