Invention Grant
US09508686B2 Semiconductor device assembly with package interconnect extending into overlying spacer material, and associated systems, devices, and methods
有权
具有延伸到上覆间隔物材料中的封装互连的半导体器件组件,以及相关联的系统,器件和方法
- Patent Title: Semiconductor device assembly with package interconnect extending into overlying spacer material, and associated systems, devices, and methods
- Patent Title (中): 具有延伸到上覆间隔物材料中的封装互连的半导体器件组件,以及相关联的系统,器件和方法
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Application No.: US14563982Application Date: 2014-12-08
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Publication No.: US09508686B2Publication Date: 2016-11-29
- Inventor: Chan Yoo , Todd O. Bolken
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/31 ; H01L25/065 ; H01L23/00 ; H01L25/10 ; H01L21/82 ; H01L23/495

Abstract:
Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.
Public/Granted literature
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