公开(公告)号：US09978730B2

公开(公告)日：2018-05-22

申请号：US15334069

申请日：2016-10-25

Applicant: Micron Technology, Inc.

Inventor： Chan Yoo ,  Todd O. Bolken

IPC: H01L21/56 ,  H01L21/48 ,  H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L21/82 ,  H01L23/495 ,  H01L25/065

CPC classification number: H01L25/105 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L21/82 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/495 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06177 ,  H01L2224/1012 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/12105 ,  H01L2224/1301 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14051 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92163 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2224/83

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

公开(公告)号：US20150137365A1

公开(公告)日：2015-05-21

申请号：US14563982

申请日：2014-12-08

Applicant: Micron Technology, Inc.

Inventor： Chan Yoo ,  Todd O. Bolken

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L25/105 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L21/82 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/495 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06177 ,  H01L2224/1012 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/12105 ,  H01L2224/1301 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14051 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92163 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2224/83

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract translation: 本文公开了制造半导体器件的方法。 根据特定实施例配置的方法包括在密封剂上形成间隔物材料，使得密封剂将间隔物材料与半导体器件的有源表面和远离有源表面突出的至少一个互连件分开。 该方法还包括模制密封剂，使得互连件的至少一部分延伸穿过密封剂并进入隔离材料。 互连可以包括与半导体器件的有源表面基本共面的接触表面，用于提供与半导体器件的电连接。

公开(公告)号：US20190088565A1

公开(公告)日：2019-03-21

申请号：US16196262

申请日：2018-11-20

Applicant: Micron Technology, Inc.

Inventor： Chan Yoo ,  Akshay Singh ,  Yi Xu ,  Liana Foster ,  Steven Eskildsen

IPC: H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L23/48

CPC classification number: H01L23/3114 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/19 ,  H01L24/20 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45169 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/48464 ,  H01L2224/49175 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06568 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3862 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor die that includes a first die located on a first side of an interposer and a second die located on a second side of the interposer. Active sides of the first and second dies may each face the interposer. A bond wire may electrically connect the first die to the second side of the interposer and a bond wire may electrically connect the second die to the first side of the interposer. The bond wires may extend through a plurality of windows in the interposer. First and second dies may be attached to a first side of an interposer and may be electrically connected to a second side of the interposer through windows and third and fourth dies may be attached to a second side of the interposer and may be electrically connected to the first side of the interposer through windows.

公开(公告)号：US20200075548A1

公开(公告)日：2020-03-05

申请号：US16120991

申请日：2018-09-04

Applicant: Micron Technology, Inc.

Inventor： Kang-Yong Kim ,  Chan Yoo ,  Dong Soon Lim ,  Jaekyu Song

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/498

Abstract: Systems, devices, and methods for interconnects for a multi-die package are described. A multi-die package may include a set of conductive pillars and two or more semiconductor dice that each include a bond pad. In some cases, the multi-die package may include a plurality of pillar-wire combinations, and a bond wire may couple a corresponding conductive pillar with a corresponding bond pad. Pillar-wire combinations may each collectively have a matched impedance, or pillar-wire combinations in different groups may have different collective impedances. In other cases, a conductive pillar may be directly coupled with a corresponding bond pad without a bond wire. Different pillar-wire combinations or directly-coupled pillars may carry different signals. In some cases, pillars may be individually impedance-matched to a desired impedance.

公开(公告)号：US20180358275A1

公开(公告)日：2018-12-13

申请号：US15621102

申请日：2017-06-13

Applicant: Micron Technology, Inc.

Inventor： Chan Yoo ,  Akshay Singh ,  Yi Xu ,  Liana Foster ,  Steven Eskildsen

IPC: H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L23/48

CPC classification number: H01L23/3114 ,  H01L23/481 ,  H01L24/19 ,  H01L24/20 ,  H01L24/45 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657

Abstract: A semiconductor die that includes a first die located on a first side of an interposer and a second die located on a second side of the interposer. Active sides of the first and second dies may each face the interposer. A bond wire may electrically connect the first die to the second side of the interposer and a bond wire may electrically connect the second die to the first side of the interposer. The bond wires may extend through a plurality of windows in the interposer. First and second dies may be attached to a first side of an interposer and may be electrically connected to a second side of the interposer through windows and third and fourth dies may be attached to a second side of the interposer and may be electrically connected to the first side of the interposer through windows.

公开(公告)号：US20230020689A1

公开(公告)日：2023-01-19

申请号：US17935019

申请日：2022-09-23

Applicant: Micron Technology, Inc.

Inventor： Chan Yoo ,  Todd O. Bolken

IPC: H01L25/10 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L21/82 ,  H01L23/495 ,  H01L25/065

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

公开(公告)号：US11456286B2

公开(公告)日：2022-09-27

申请号：US16840794

申请日：2020-04-06

Applicant: Micron Technology, Inc.

Inventor： Chan Yoo ,  Todd O. Bolken

IPC: H01L23/12 ,  H01L25/10 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L21/82 ,  H01L23/495 ,  H01L25/065

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

公开(公告)号：US10366934B2

公开(公告)日：2019-07-30

申请号：US16196262

申请日：2018-11-20

Applicant: Micron Technology, Inc.

Inventor： Chan Yoo ,  Akshay Singh ,  Yi Xu ,  Liana Foster ,  Steven Eskildsen

IPC: H01L23/02 ,  H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L23/48

Abstract: A semiconductor die that includes a first die located on a first side of an interposer and a second die located on a second side of the interposer. Active sides of the first and second dies may each face the interposer. A bond wire may electrically connect the first die to the second side of the interposer and a bond wire may electrically connect the second die to the first side of the interposer. The bond wires may extend through a plurality of windows in the interposer. First and second dies may be attached to a first side of an interposer and may be electrically connected to a second side of the interposer through windows and third and fourth dies may be attached to a second side of the interposer and may be electrically connected to the first side of the interposer through windows.

公开(公告)号：US10153221B1

公开(公告)日：2018-12-11

申请号：US15621102

申请日：2017-06-13

Applicant: Micron Technology, Inc.

Inventor： Chan Yoo ,  Akshay Singh ,  Yi Xu ,  Liana Foster ,  Steven Eskildsen

IPC: H01L23/02 ,  H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L23/48

CPC classification number: H01L23/3114 ,  H01L23/481 ,  H01L24/19 ,  H01L24/20 ,  H01L24/45 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657

Abstract: A semiconductor die that includes a first die located on a first side of an interposer and a second die located on a second side of the interposer. Active sides of the first and second dies may each face the interposer. A bond wire may electrically connect the first die to the second side of the interposer and a bond wire may electrically connect the second die to the first side of the interposer. The bond wires may extend through a plurality of windows in the interposer. First and second dies may be attached to a first side of an interposer and may be electrically connected to a second side of the interposer through windows and third and fourth dies may be attached to a second side of the interposer and may be electrically connected to the first side of the interposer through windows.

公开(公告)号：US09508686B2

公开(公告)日：2016-11-29

申请号：US14563982

申请日：2014-12-08

Applicant: Micron Technology, Inc.

Inventor： Chan Yoo ,  Todd O. Bolken

IPC: H01L21/56 ,  H01L23/31 ,  H01L25/065 ,  H01L23/00 ,  H01L25/10 ,  H01L21/82 ,  H01L23/495

CPC classification number: H01L25/105 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L21/82 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/495 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06177 ,  H01L2224/1012 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/12105 ,  H01L2224/1301 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14051 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92163 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2224/83

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract translation: 本文公开了制造半导体器件的方法。 根据特定实施例配置的方法包括在密封剂上形成间隔物材料，使得密封剂将间隔物材料与半导体器件的有源表面和远离有源表面突出的至少一个互连件分开。 该方法还包括模制密封剂，使得互连件的至少一部分延伸穿过密封剂并进入隔离材料。 互连可以包括与半导体器件的有源表面基本共面的接触表面，用于提供与半导体器件的电连接。