Invention Grant
US09508713B2 Densely spaced fins for semiconductor fin field effect transistors
有权
用于半导体鳍场效应晶体管的密集间隔的翅片
- Patent Title: Densely spaced fins for semiconductor fin field effect transistors
- Patent Title (中): 用于半导体鳍场效应晶体管的密集间隔的翅片
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Application No.: US14198005Application Date: 2014-03-05
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Publication No.: US09508713B2Publication Date: 2016-11-29
- Inventor: Hong He , Chiahsun Tseng , Chun-Chen Yeh , Yunpeng Yin
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/308 ; H01L29/66 ; H01L21/8234 ; H01L27/12 ; H01L29/16 ; H01L29/78 ; H01L21/84
Abstract:
A method of forming a fin-based field-effect transistor device includes forming one or more first fins comprising silicon on a substrate, forming epitaxial layers on sides of the one or more first fins, and removing the one or more first fins to form a plurality of second fins.
Public/Granted literature
- US20150255300A1 DENSELY SPACED FINS FOR SEMICONDUCTOR FIN FIELD EFFECT TRANSISTORS Public/Granted day:2015-09-10
Information query
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