Invention Grant
US09508743B2 Dual three-dimensional and RF semiconductor devices using local SOI
有权
使用局部SOI的双重三维和RF半导体器件
- Patent Title: Dual three-dimensional and RF semiconductor devices using local SOI
- Patent Title (中): 使用局部SOI的双重三维和RF半导体器件
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Application No.: US14525842Application Date: 2014-10-28
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Publication No.: US09508743B2Publication Date: 2016-11-29
- Inventor: Jagar Singh , Srikanth Balaji Samavedam
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Wayne F. Reinke, Esq.
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/84 ; H01L29/06 ; H01L23/66 ; H01L21/762 ; H01L27/092

Abstract:
Co-fabrication of a radio-frequency (RF) semiconductor device with a three-dimensional semiconductor device includes providing a starting three-dimensional semiconductor structure, the starting structure including a bulk silicon semiconductor substrate, raised semiconductor structure(s) coupled to the substrate and surrounded by a layer of isolation material. Span(s) of the layer of isolation material between adjacent raised structures are recessed, and a layer of epitaxial semiconductor material is created over the recessed span(s) of isolation material over which another layer of isolation material is created. The RF device(s) are fabricated on the layer of isolation material above the epitaxial material, which creates a local silicon-on-insulator, while the three-dimensional semiconductor device(s) can be fabricated on the raised structure(s).
Public/Granted literature
- US20160118414A1 DUAL THREE-DIMENSIONAL AND RF SEMICONDUCTOR DEVICES USING LOCAL SOI Public/Granted day:2016-04-28
Information query
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