发明授权
- 专利标题： Semiconductor device including a resistor metallic layer and method of forming the same
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申请号： US14671956申请日： 2015-03-27
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公开(公告)号： US09508785B1公开(公告)日： 2016-11-29
- 发明人: Douglas Dean Lopata , Jeffrey Demski , Jay Norton , Miguel Rojas-Gonzales
- 申请人： Altera Corporation
- 申请人地址： US CA San Jose
- 专利权人： Altera Corporation
- 当前专利权人： Altera Corporation
- 当前专利权人地址： US CA San Jose
- 代理机构： Fletcher Yoder, P.C.
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L49/02
摘要：
A semiconductor device including a resistor metallic layer and method forming the same. In one embodiment, the semiconductor device includes a source region and a drain region of a semiconductor switch on a substrate. The semiconductor device also includes the resistor metallic layer over the source region and the drain region of the semiconductor switch. The resistor metallic layer includes a first resistor with a first resistor metallic strip coupled between a first cross member and a second cross member of the resistor metallic layer.
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