公开(公告)号：US09673192B1

公开(公告)日：2017-06-06

申请号：US14671959

申请日：2015-03-27

申请人： Altera Corporation

发明人： Douglas Dean Lopata ,  Jeffrey Demski ,  Jay Norton ,  Miguel Rojas-Gonzales

IPC分类号： H01L27/06 ,  H01L49/02 ,  H01L23/48 ,  H02M3/158

CPC分类号： H01L27/0629 ,  G01R19/0092 ,  H01L23/481 ,  H01L28/20 ,  H02M3/158 ,  H02M2001/0009

摘要： A semiconductor device including a resistor metallic layer and method forming the same. In one embodiment, the semiconductor device includes a source region and a drain region of a power switch on a substrate. The semiconductor device also includes the resistor metallic layer over the source region and the drain region of the power switch. The resistor metallic layer includes a current sense resistor including a first current sense resistor metallic strip coupled between a first cross member and a second cross member, and a first gain resistor including a first gain resistor metallic strip coupled to the first cross member. The semiconductor device also includes an amplifier over the substrate and coupled to the first gain resistor metallic strip.

公开(公告)号：US09508785B1

公开(公告)日：2016-11-29

申请号：US14671956

申请日：2015-03-27

申请人： Altera Corporation

发明人： Douglas Dean Lopata ,  Jeffrey Demski ,  Jay Norton ,  Miguel Rojas-Gonzales

IPC分类号： H01L27/06 ,  H01L49/02

摘要： A semiconductor device including a resistor metallic layer and method forming the same. In one embodiment, the semiconductor device includes a source region and a drain region of a semiconductor switch on a substrate. The semiconductor device also includes the resistor metallic layer over the source region and the drain region of the semiconductor switch. The resistor metallic layer includes a first resistor with a first resistor metallic strip coupled between a first cross member and a second cross member of the resistor metallic layer.

公开(公告)号：US09536938B1

公开(公告)日：2017-01-03

申请号：US14671956

申请日：2015-03-27

申请人： Altera Corporation

发明人： Douglas Dean Lopata ,  Jeffrey Demski ,  Jay Norton ,  Miguel Rojas-Gonzales

IPC分类号： H01L27/06 ,  H01L49/02

CPC分类号： H01L28/20 ,  H01L27/0629 ,  H02M3/158 ,  H02M2001/0009

摘要： A semiconductor device including a resistor metallic layer and method forming the same. In one embodiment, the semiconductor device includes a source region and a drain region of a semiconductor switch on a substrate. The semiconductor device also includes the resistor metallic layer over the source region and the drain region of the semiconductor switch. The resistor metallic layer includes a first resistor with a first resistor metallic strip coupled between a first cross member and a second cross member of the resistor metallic layer.

摘要翻译： 一种包括电阻金属层的半导体器件及其形成方法。 在一个实施例中，半导体器件包括衬底上的半导体开关的源极区域和漏极区域。 半导体器件还包括半导体开关的源极区域和漏极区域上的电阻器金属层。 电阻器金属层包括第一电阻器，其具有耦合在电阻器金属层的第一横向构件和第二横向构件之间的第一电阻器金​​属带。