Invention Grant
- Patent Title: Thin film transistor display panel
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Application No.: US14635732Application Date: 2015-03-02
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Publication No.: US09508857B2Publication Date: 2016-11-29
- Inventor: Byung Du Ahn , Ji Hun Lim , Jun Hyung Lim , Dae Hwan Kim , Jae Hyeong Kim , Je Hun Lee , Hyun Kwang Jung
- Applicant: Samsung Display Co., Ltd. , Kookmin University Industry Academy Cooperation Foundation
- Applicant Address: KR KR
- Assignee: SAMSUNG DISPLAY CO., LTD.,KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
- Current Assignee: SAMSUNG DISPLAY CO., LTD.,KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
- Current Assignee Address: KR KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2012-0115045 20121016
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L21/28

Abstract:
A thin film transistor display panel a includes a transparent substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the gate electrode; a semiconductor layer positioned on the gate insulating layer and including a channel region; a source electrode and a drain electrode positioned on the semiconductor layer and facing each other; and a passivation layer configured to cover the source electrode, the drain electrode, and the semiconductor layer, wherein the semiconductor layer includes a relatively thick first portion between the source electrode and the gate electrode and a relatively thinner second portion between the drain electrode and the gate electrode overlap, the relatively thick first portion being sufficiently thick to substantially reduce a charge trapping phenomenon that may otherwise occur at a gate electrode to gate dielectric interface if the first portion were as thin as the second portion.
Public/Granted literature
- US20150171226A1 THIN FILM TRANSISTOR DISPLAY PANEL Public/Granted day:2015-06-18
Information query
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