Invention Grant
- Patent Title: Transistors, methods of manufacturing the same, and electronic devices including transistors
- Patent Title (中): 晶体管及其制造方法以及包括晶体管的电子器件
-
Application No.: US14664298Application Date: 2015-03-20
-
Publication No.: US09508865B2Publication Date: 2016-11-29
- Inventor: Jongbaek Seon , Seokjun Seo , Taesang Kim , Myungkwan Ryu , Seongho Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0034818 20140325
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; H01L29/51 ; H01L29/49
Abstract:
According to example embodiments, a transistor includes a gate, a channel layer that is separate from the gate, a gate insulating layer between the gate and the channel layer, and a source electrode and a drain electrode respectively contacting a first region and a second region of the channel layer. The gate insulating layer includes an impurity metal containing region that includes an impurity metal and contacts the channel layer. The gate insulating layer includes an impurity metal non-containing region contacting the gate that is not doped with the impurity metal.
Public/Granted literature
- US20150280000A1 TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS Public/Granted day:2015-10-01
Information query
IPC分类:
