Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14972453Application Date: 2015-12-17
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Publication No.: US09509309B2Publication Date: 2016-11-29
- Inventor: SukYong Kang , Han-Gi Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0001814 20150107
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K19/003 ; H03K19/0175

Abstract:
A semiconductor device may include a termination resistor circuit including a first termination resistor connected to a power voltage and a second termination resistor between the first termination resistor and a ground, a value of the first termination resistor and the second termination resistor changes based on a feedback signal; a mismatch detector may generate a compared result based on a potential difference between a voltage of a center node, between the first and second termination resistors, and a reference voltage; a code generator may generate the feedback signal based on the compared result, and generate a feedback code based on the compared result; a code register may generate a mismatch code controlling a mismatch between the first and second termination resistors based on the feedback code; and a corrector may compensate for the mismatch between the first and second termination resistors based on the mismatch code.
Public/Granted literature
- US20160197612A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-07-07
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