Invention Grant
- Patent Title: Method for fabricating an interposer
- Patent Title (中): 中介层的制造方法
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Application No.: US14744464Application Date: 2015-06-19
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Publication No.: US09515048B2Publication Date: 2016-12-06
- Inventor: Wen-Kuang Wu , Tsung-Te Yuan , Chun-Hung Lu
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW103124685A 20140718
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/78 ; H01L21/683 ; H01L23/522

Abstract:
A method for fabricating an interposer is provided, which includes the steps of: providing a substrate body having a chip mounting side and an opposite external connection side and a plurality of conductive through holes communicating the chip mounting side and the external connection side, wherein the chip mounting side of the substrate body is covered with a protection layer; performing a singulation process on the external connection side of the substrate body; bonding the substrate body to a carrier via the external connection side thereof; removing the protection layer; and removing the carrier to form a plurality of interposers, thereby simplifying the fabrication process and improving the product yield.
Public/Granted literature
- US20160020190A1 METHOD FOR FABRICATING AN INTERPOSER Public/Granted day:2016-01-21
Information query
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