Invention Grant
- Patent Title: Monolithically isled back contact back junction solar cells
- Patent Title (中): 单片背面接触背面太阳能电池
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Application No.: US14179526Application Date: 2014-02-12
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Publication No.: US09515217B2Publication Date: 2016-12-06
- Inventor: Mehrdad M. Moslehi , Pawan Kapur , Karl-Josef Kramer , Michael Wingert
- Applicant: Solexel, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Solexel, Inc.
- Current Assignee: Solexel, Inc.
- Current Assignee Address: US CA Milpitas
- Agent John Wood
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0224 ; H01L27/142 ; H01L31/05

Abstract:
According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.
Public/Granted literature
- US20140370650A1 MONOLITHICALLY ISLED BACK CONTACT BACK JUNCTION SOLAR CELLS USING BULK WAFERS Public/Granted day:2014-12-18
Information query
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