公开(公告)号：US20150207002A1

公开(公告)日：2015-07-23

申请号：US14475566

申请日：2014-09-02

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Thom Stalcup ,  Michael Wingert ,  Jay Ashjaee ,  Pawan Kapur ,  Homi Fatemi

IPC: H01L31/0465 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/0224

CPC classification number: H01L31/0465 ,  H01L31/02245 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547

Abstract: Solar cell array solutions including monolithic solar cell arrays and fabrication methods. A first patterned cell metallization contacts base and emitter regions of each of a plurality of solar cells having a light receiving frontside and a backside. An electrically insulating continuous backplane layer is attached to the backside of the solar cells and covers the first cell metallization of each of the solar cells. Via holes through the continuous backplane layer provide access to the first cell metallization. A second cell metallization is connected to the first cell metallization of each of the solar cells and electrically interconnects the solar cells in the array.

Abstract translation: 太阳能电池阵列解决方案，包括单片太阳能电池阵列和制造方法。 第一图案化电池金属化接触具有光接收前侧和后侧的多个太阳能电池中的每一个的基极和发射极区域。 电绝缘的连续背板层连接到太阳能电池的背面并且覆盖每个太阳能电池的第一电池金属化。 穿过连续背板层的通孔提供对第一电池金属化的访问。 第二电池金属化连接到每个太阳能电池的第一电池金属化，并将阵列中的太阳能电池电互连。

公开(公告)号：US09515217B2

公开(公告)日：2016-12-06

申请号：US14179526

申请日：2014-02-12

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  Michael Wingert

IPC: H01L31/18 ,  H01L31/0224 ,  H01L27/142 ,  H01L31/05

CPC classification number: H01L31/18 ,  H01L27/1421 ,  H01L31/02245 ,  H01L31/0516 ,  Y02E10/50

Abstract: According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.

Abstract translation: 根据所公开的主题的一个方面，提供了一种形成一体式背面接触背面太阳能电池的方法。 发射极和基极接触区形成在具有光接收前侧和与前侧相对的背面的半导体晶片的背面。 第一层接触金属化形成在晶片背面，并且电绝缘底板附着到半导体晶片背面。 在将半导体晶片图案化成多个电隔离岛的半导体晶片中形成隔离沟槽，并且半导体晶片变薄。 在电绝缘背板上形成电连接多个岛的金属化结构。

公开(公告)号：US09806220B2

公开(公告)日：2017-10-31

申请号：US14539978

申请日：2014-11-12

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Thom Stalcup ,  Karl-Josef Kramer ,  Anthony Calcaterra ,  Virendra V. Rana ,  Sean M. Seutter ,  Pawan Kapur ,  Michael Wingert

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact solar cell is described which includes a semiconductor light absorbing layer; a first-level metal layer (M1), the M1 metal layer on a back side of the light absorbing layer, the back side being opposite from a front side of the light absorbing layer designed to receive incident light; an electrically insulating backplane sheet backside of said solar cell with the M1 layer, the backplane sheet comprising a plurality of via holes that expose portions of the M1 layer beneath the backplane sheet; and an M2 layer in contact with the backplane sheet, the M2 layer made of a sheet of pre-fabricated metal foil material comprising a thickness of between 5-250 μm, the M2 layer electrically connected to the M1 layer through the via holes in the backplane sheet.

公开(公告)号：US20150129031A1

公开(公告)日：2015-05-14

申请号：US14539978

申请日：2014-11-12

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Thom Stalcup ,  Karl-Josef Kramer ,  Anthony Calcaterra ,  Virendra V. Rana ,  Sean M. Seutter ,  Pawan Kapur ,  Michael Wingert

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0216

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact solar cell is described which includes a semiconductor light absorbing layer; a first-level metal layer (M1), the M1 metal layer on a back side of the light absorbing layer, the back side being opposite from a front side of the light absorbing layer designed to receive incident light; an electrically insulating backplane sheet backside of said solar cell with the M1 layer, the backplane sheet comprising a plurality of via holes that expose portions of the M1 layer beneath the backplane sheet; and an M2 layer in contact with the backplane sheet, the M2 layer made of a sheet of pre-fabricated metal foil material comprising a thickness of between 5-250 μm, the M2 layer electrically connected to the M1 layer through the via holes in the backplane sheet.

Abstract translation: 描述了一种背接触太阳能电池，其包括半导体光吸收层; 第一级金属层（M1），位于光吸收层背面的M1金属层，后侧与设计成接收入射光的光吸收层的前侧相反; 具有M1层的所述太阳能电池的背面电绝缘底板，所述背板片包括多个通孔，所述多个通孔使得所述M1层的背面板下方的部分露出; 以及与背板接触的M2层，M2层由包括5-250μm的厚度的预制金属箔材料制成，M2层通过导电孔中的通孔与M1层电连接 底板。

公开(公告)号：US20140370650A1

公开(公告)日：2014-12-18

申请号：US14179526

申请日：2014-02-12

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  Michael Wingert

IPC: H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/18 ,  H01L27/1421 ,  H01L31/02245 ,  H01L31/0516 ,  Y02E10/50

Abstract: According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell using bulk wafers is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.

Abstract translation: 根据所公开的主题的一个方面，提供了一种使用块状晶片形成单片背面接触背面太阳能电池的方法。 发射极和基极接触区形成在具有光接收前侧和与前侧相对的背面的半导体晶片的背面。 第一层接触金属化形成在晶片背面，并且电绝缘底板附着到半导体晶片背面。 在将半导体晶片图案化成多个电隔离岛的半导体晶片中形成隔离沟槽，并且半导体晶片变薄。 在电绝缘底板上形成电连接多个岛的金属化结构。