Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14849923Application Date: 2015-09-10
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Publication No.: US09519175B2Publication Date: 2016-12-13
- Inventor: Kiyoshi Kato , Toshihiko Saito
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2003-067275 20030312
- Main IPC: G09G3/36
- IPC: G09G3/36 ; G02F1/1333 ; G06F3/044 ; G02F1/1362 ; H01L29/786 ; G02F1/133 ; G02F1/1345 ; H01L27/12 ; H01L27/13 ; H01L27/32

Abstract:
A variable capacitor is formed from a pair of electrodes and a dielectric interposed between the electrodes over a substrate, and an external input is detected by changing capacitance of the variable capacitor by a physical or electrical force. Specifically, a variable capacitor and a sense amplifier are provided over the same substrate, and the sense amplifier reads the change of capacitance of the variable capacitor and transmits a signal in accordance with the input to a control circuit.
Public/Granted literature
- US20150378198A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-12-31
Information query
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