Invention Grant
- Patent Title: Light emitting element and light emitting device using the same
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Application No.: US14521695Application Date: 2014-10-23
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Publication No.: US09520532B2Publication Date: 2016-12-13
- Inventor: Daisuke Kumaki , Satoshi Seo
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2004-216503 20040723; JP2005-076184 20050317
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L33/00 ; H01L51/52 ; H01L33/60 ; H01L27/15 ; H01L33/42 ; H01L27/32 ; H01L51/00

Abstract:
An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.
Public/Granted literature
- US20150035000A1 LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE USING THE SAME Public/Granted day:2015-02-05
Information query
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