Invention Grant
- Patent Title: Fin-shaped structure and method thereof
- Patent Title (中): 鳍状结构及其方法
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Application No.: US14519146Application Date: 2014-10-21
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Publication No.: US09524987B2Publication Date: 2016-12-20
- Inventor: Chih-Kai Hsu , Yu-Hsiang Hung , Ssu-I Fu , Jyh-Shyang Jenq
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L27/12 ; H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L21/762 ; H01L21/84
Abstract:
A method of forming a fin-shaped structure includes the following steps. A substrate having at least a fin structure thereon is provided. A liner is formed on sidewalls of the fin structure. An oxide layer is formed between the fin structure and the substrate. The fin structure is removed until a bottom layer of the fin structure is reserved, to form a recess between the liner. A buffer epitaxial layer and an epitaxial layer are sequentially formed in the recess. A top part of the liner is removed until sidewalls of the epitaxial layer are exposed. Moreover, a fin-shaped structure formed by said method is also provided.
Public/Granted literature
- US20160111448A1 FIN-SHAPED STRUCTURE AND METHOD THEREOF Public/Granted day:2016-04-21
Information query
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