Invention Grant
- Patent Title: Semiconductor device including oxide semiconductor
- Patent Title (中): 半导体器件包括氧化物半导体
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Application No.: US14723630Application Date: 2015-05-28
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Publication No.: US09525073B2Publication Date: 2016-12-20
- Inventor: Tomoaki Atsumi , Yoshiyuki Kobayashi , Yutaka Shionoiri , Yuto Yakubo , Shuhei Nagatsuka , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2014-113591 20140530; JP2014-113592 20140530; JP2014-182127 20140908
- Main IPC: G05F3/08
- IPC: G05F3/08 ; G05F1/10 ; G05F3/26 ; H01L29/786 ; H01L29/78 ; H01L29/06 ; H01L29/24 ; H01L27/12 ; H01L29/04 ; H01L27/085 ; H01L27/088 ; H01L29/66 ; H01L29/778 ; H01L29/16 ; H01L29/20
Abstract:
A semiconductor device which occupies a small area is provided. A semiconductor device includes a resistor. The resistor includes a transistor. The increase rate of a drain current of the transistor with a 0.1 V change in drain voltage is preferably higher than or equal to 1% when the drain voltage is higher than a difference between a gate voltage and a threshold voltage of the transistor. The semiconductor device has a function of generating a voltage based on the resistance of the resistor.
Public/Granted literature
- US20150349131A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-12-03
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