Invention Grant
US09526436B2 Amplifiers including tunable tunnel field effect transistor pseudo resistors and related devices
有权
放大器包括可调谐隧道场效应晶体管伪电阻和相关器件
- Patent Title: Amplifiers including tunable tunnel field effect transistor pseudo resistors and related devices
- Patent Title (中): 放大器包括可调谐隧道场效应晶体管伪电阻和相关器件
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Application No.: US14729339Application Date: 2015-06-03
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Publication No.: US09526436B2Publication Date: 2016-12-27
- Inventor: Nuo Xu , Jing Wang , Woosung Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd
- Current Assignee: Samsung Electronics Co., Ltd
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Main IPC: H03F3/187
- IPC: H03F3/187 ; A61B5/0482 ; H03F1/02 ; H03F3/45

Abstract:
Neural signal amplifiers include an operational amplifier and a feedback network coupled between an output and an input thereof. The feedback network includes a tunnel field effect transistor (“TFET”) pseudo resistor that exhibits bi-directional conductivity. A drain region of the TFET may be electrically connected to the gate electrode thereof to provide a bi-directional resistor having good symmetry in terms of resistance as a function of voltage polarity.
Public/Granted literature
- US20160338612A1 AMPLIFIERS INCLUDING TUNABLE TUNNEL FIELD EFFECT TRANSISTOR PSEUDO RESISTORS AND RELATED DEVICES Public/Granted day:2016-11-24
Information query
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