Invention Grant
US09530459B2 Semiconductor memory device including a repeater circuit on main data lines
有权
半导体存储器件包括在主数据线上的中继器电路
- Patent Title: Semiconductor memory device including a repeater circuit on main data lines
- Patent Title (中): 半导体存储器件包括在主数据线上的中继器电路
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Application No.: US14523704Application Date: 2014-10-24
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Publication No.: US09530459B2Publication Date: 2016-12-27
- Inventor: Shingo Mitsubori , Hiroki Fujisawa
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Priority: JP2013-221945 20131025
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C5/02 ; G11C7/08 ; G11C7/10 ; G11C7/12 ; G11C11/4091 ; G11C11/4094 ; G11C11/4096
Abstract:
A semiconductor memory disclosed in this disclosure includes first and second memory cell arrays, a first main data line that transfers the read data read from the first memory cell array, a second main data line that transfers the read data read from the second memory cell array, a main amplifier coupled to the second main data line, and a repeater circuit coupled to the first main data line and the second main data line.
Public/Granted literature
- US20150120997A1 SEMICONDUCTOR DEVICE INCLUDING REPEATER CIRCUIT FOR MAIN DATA LINE Public/Granted day:2015-04-30
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