Invention Grant
- Patent Title: Semiconductor-on-insulator integrated circuit with interconnect below the insulator
- Patent Title (中): 绝缘体上绝缘体半导体集成电路
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Application No.: US14272261Application Date: 2014-05-07
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Publication No.: US09530796B2Publication Date: 2016-12-27
- Inventor: Michael A. Stuber , Stuart B. Molin , Chris Brindle
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L27/12 ; H01L21/84
Abstract:
An integrated circuit assembly comprises an insulating layer, a semiconductor layer, a handle layer, a metal interconnect layer, and transistors. The insulating layer has a first surface, a second surface, and a hole extending from the first surface to the second surface. The semiconductor layer has a first surface and a second surface, the first surface of the semiconductor layer contacting the first surface of the insulating layer. The handle layer is coupled to the second surface of the semiconductor layer. The metal interconnect layer is coupled to the second surface of the insulating layer, the metal interconnect layer being disposed within the hole in the insulating layer. The transistors are located in the semiconductor layer. The hole in the insulating layer extends to at least the first surface of the semiconductor layer. The metal interconnect layer electrically couples a plurality of the transistors to each other.
Public/Granted literature
- US20140291860A1 Semiconductor-on-insulator integrated circuit with interconnect below the insulator Public/Granted day:2014-10-02
Information query
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