Invention Grant
- Patent Title: Manufacturing method of semiconductor device
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Application No.: US14521710Application Date: 2014-10-23
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Publication No.: US09530806B2Publication Date: 2016-12-27
- Inventor: Masashi Tsubuku , Shuhei Yoshitomi , Takahiro Tsuji , Miyuki Hosoba , Junichiro Sakata , Hiroyuki Tomatsu , Masahiko Hayakawa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-205328 20090904; JP2009-206490 20090907
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L27/12 ; H01L29/786 ; H01L29/66 ; H01L21/02
Abstract:
It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
Public/Granted literature
- US09406706B2 Manufacturing method of semiconductor device Public/Granted day:2016-08-02
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