Invention Grant
- Patent Title: Display device using an oxide semiconductor
- Patent Title (中): 使用氧化物半导体的显示装置
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Application No.: US14658430Application Date: 2015-03-16
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Publication No.: US09530896B2Publication Date: 2016-12-27
- Inventor: Norihiro Uemura , Isao Suzumura , Hidekazu Miyake , Yohei Yamaguchi
- Applicant: Japan Display Inc.
- Applicant Address: JP Minato-ku
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-053604 20140317
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; H01L29/417

Abstract:
Provided are a reliable high performance thin film transistor and a reliable high performance display device. The display device has: a gate electrode which is formed on a substrate; a gate insulating film which is formed to cover the substrate and the gate electrode; an oxide semiconductor layer which is formed on the gate electrode through the gate insulating film; a channel protective layer which is in contact with the oxide semiconductor layer and formed on the oxide semiconductor layer; and source/drain electrodes which are electrically connected to the oxide semiconductor layer and formed to cover the oxide semiconductor layer. A metal oxide layer is formed on an upper part of the channel protective layer. The source/drain electrodes are formed to be divided apart on the channel protective layer and the metal oxide layer.
Public/Granted literature
- US20150263048A1 DISPLAY DEVICE AND THE MANUFACTURING METHOD OF THE SAME Public/Granted day:2015-09-17
Information query
IPC分类: