发明授权
- 专利标题： Composition for pattern formation, and pattern-forming method
- 专利标题（中）： 用于图案形成的组合物和图案形成方法
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申请号： US14620935申请日： 2015-02-12
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公开(公告)号： US09534135B2公开(公告)日： 2017-01-03
- 发明人: Hiroyuki Komatsu , Takehiko Naruoka , Shinya Minegishi , Tomoki Nagai
- 申请人： JSR CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： JSR CORPORATION
- 当前专利权人： JSR CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2014-025978 20140213; JP2014-085946 20140417
- 主分类号： B44C1/22
- IPC分类号： B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; C09D153/00 ; C08F212/08 ; C08F230/08 ; C08F297/02 ; G03F7/00 ; B05D1/18
摘要：
A composition for pattern formation includes a block copolymer and a solvent. The block copolymer is capable of forming a phase separation structure through directed self-assembly. The block copolymer includes a first block and a second block. The first block includes a first repeating unit which includes at least two silicon atoms. The second block includes a second repeating unit which does not include a silicon atom. A sum of the atomic weight of atoms constituting the first repeating unit is no greater than 700.
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