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    Modification method of surface of base, composition, and polymer
    1.
    发明授权
    Modification method of surface of base, composition, and polymer 有权

    公开(公告)号：US11426761B2

    公开(公告)日：2022-08-30

    申请号：US17000727

    申请日：2020-08-24

    申请人： JSR CORPORATION

    发明人： Hiroyuki Komatsu ,  Miki Tamada ,  Hitoshi Osaki ,  Tomoki Nagai

    IPC分类号： B05D3/00 ,  B05D1/00 ,  B05D3/10 ,  B05D3/02 ,  C09D125/08 ,  C09D125/06 ,  C09D133/12 ,  C23C16/455

    摘要： A modification method of a surface of a base includes applying a composition on a surface layer of a base to form a coating film. The surface layer contains a metal atom. The coating is heated. The composition contains a polymer and a solvent. The polymer includes at an end of a main chain or at an end of a side chain thereof, a functional group that is at least one selected from: a group represented by the following formula (1); a group containing a carbon-carbon triple bond; and a group containing an aromatic hydroxy group. In the formula (1), R1 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and n is an integer of 1 to 10, wherein in a case in which n is no less than 2, a plurality of R1s are identical or different.

    PATTERN-FORMING METHOD AND COMPOSITION
    3.
    发明申请
    PATTERN-FORMING METHOD AND COMPOSITION 审中-公开

    公开(公告)号：US20190235386A1

    公开(公告)日：2019-08-01

    申请号：US16376385

    申请日：2019-04-05

    申请人： JSR Corporation

    发明人： Hiroyuki Komatsu ,  Takehiko Naruoka ,  Masafumi Hori ,  Hitoshi Osaki ,  Tomohiro Oda

    IPC分类号： G03F7/11 ,  H01L21/308 ,  H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  C08F112/08 ,  C08F212/08

    摘要： A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate directly or via other layer. The recessed portions of the base pattern are filled with a first composition to form a filler layer. Phase separation of the filler layer is allowed to form a plurality of phases of the filler layer. A part of the plurality of phases of the filler layer is removed to form a miniaturized pattern. The forming of the base pattern includes: forming a resist pattern on the front face side of the substrate; forming a layer of a second polymer on lateral faces of the resist pattern; and forming a layer of a third polymer that differs from the second polymer on a surface of the substrate or on a surface of the other layer.

    Base film-forming composition, and directed self-assembly lithography method
    4.
    发明授权
    Base film-forming composition, and directed self-assembly lithography method 有权
    基底成膜组合物和定向自组装光刻方法

    公开(公告)号：US09557644B2

    公开(公告)日：2017-01-31

    申请号：US14582703

    申请日：2014-12-24

    申请人： JSR CORPORATION

    发明人： Hiroyuki Komatsu ,  Takehiko Naruoka ,  Shinya Minegishi ,  Kaori Sakai ,  Tomoki Nagai

    IPC分类号： H01L21/30 ,  B81C1/00 ,  G03F7/00 ,  G03F7/038 ,  C09D133/06 ,  C09D125/14 ,  G03F7/11

    CPC分类号： C09D125/14 ,  C08F220/14 ,  C09D133/06 ,  C09D133/12 ,  G03F7/0002 ,  G03F7/0388 ,  G03F7/11 ,  C08F2220/325 ,  C08F212/08 ,  C08F2220/1841

    摘要： A base film-forming composition includes a compound including a group capable of reacting with Si—OH or Si—H, and a solvent. The base film-forming composition is for forming a base film provided between a layer including a silicon atom and a directed self-assembling film in a directed self-assembly lithography process. The receding contact angle of the base film for pure water is no less than 70° and no greater than 90°. The compound is preferably represented by formula (1). In the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200.

    摘要翻译： 基础成膜组合物包括包含能够与Si-OH或Si-H反应的基团的化合物和溶剂。 基底成膜组合物用于在定向自组装光刻工艺中形成设置在包括硅原子的层和定向自组装膜之间的基膜。 纯水基底膜的后退接触角不小于70°，不大于90°。 该化合物优选由式（1）表示。 在式（1）中，A表示具有（m + n）价的连接基团。 D表示具有至少10个碳原子的一价有机基团; E表示能够与Si-OH或Si-H反应的基团; m和n各自独立地为1〜200的整数。

    Composition, polymer, and method of producing substrate
    6.
    发明授权
    Composition, polymer, and method of producing substrate 有权

    公开(公告)号：US11578230B2

    公开(公告)日：2023-02-14

    申请号：US17196006

    申请日：2021-03-09

    申请人： JSR CORPORATION

    发明人： Hiroyuki Komatsu ,  Miki Tamada ,  Ryo Kumegawa ,  Tatsuya Sakai

    IPC分类号： B05D1/00 ,  C09D125/16 ,  C23C18/00 ,  C08F212/08 ,  C08F212/12 ,  C08L101/02 ,  C23C18/18 ,  B05D3/02 ,  H01L23/14 ,  B05D7/24

    摘要： A method of producing a substrate includes: applying a composition on a metal basal plate to form a coating film; and forming a metal-containing layer on at least a part of the coating film. The composition contains a solvent, and a polymer having a first terminal structure and a second terminal structure in a single molecule. Each of the first terminal structure and the second terminal structure is at least one selected from the group consisting of a structure represented by formula (1) and a structure represented by formula (2). A1 and A2 each independently represent a monovalent group having a functional group capable of forming a chemical bond with a metal atom. L2 represents —S—, —NR—, or —NA22-, wherein A22 represents a monovalent group having a functional group capable of forming a chemical bond with a metal atom.

    Selective modification method of a base material surface
    7.
    发明授权
    Selective modification method of a base material surface 有权

    公开(公告)号：US10923342B2

    公开(公告)日：2021-02-16

    申请号：US16550695

    申请日：2019-08-26

    申请人： JSR CORPORATION

    发明人： Hitoshi Osaki ,  Hiroyuki Komatsu

    IPC分类号： H01L21/02

    摘要： A selective modification method of a base material surface includes subjecting at least a part of a surface of a base material to at least one surface treatment selected from the group consisting of an oxidization treatment and a hydrophilization treatment. The base material includes a surface layer and includes an oxide, a nitride or an oxynitride of silicon, or a combination thereof in a first region of the surface layer. A nonphotosensitive composition is applied directly or indirectly on the surface of the base material after the surface treatment. The nonphotosensitive composition includes: a first polymer containing a nitrogen atom; and a solvent. It is preferred that the base material contains a metal in a second region which is other than the first region of the surface layer. In the surface treatment step, an O2 plasma treatment is preferably conducted.