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    Modification method of surface of base, composition, and polymer
    1.
    发明授权
    Modification method of surface of base, composition, and polymer 有权

    公开(公告)号：US11426761B2

    公开(公告)日：2022-08-30

    申请号：US17000727

    申请日：2020-08-24

    Applicant: JSR CORPORATION

    Inventor： Hiroyuki Komatsu ,  Miki Tamada ,  Hitoshi Osaki ,  Tomoki Nagai

    IPC: B05D3/00 ,  B05D1/00 ,  B05D3/10 ,  B05D3/02 ,  C09D125/08 ,  C09D125/06 ,  C09D133/12 ,  C23C16/455

    Abstract: A modification method of a surface of a base includes applying a composition on a surface layer of a base to form a coating film. The surface layer contains a metal atom. The coating is heated. The composition contains a polymer and a solvent. The polymer includes at an end of a main chain or at an end of a side chain thereof, a functional group that is at least one selected from: a group represented by the following formula (1); a group containing a carbon-carbon triple bond; and a group containing an aromatic hydroxy group. In the formula (1), R1 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and n is an integer of 1 to 10, wherein in a case in which n is no less than 2, a plurality of R1s are identical or different.

    PATTERN-FORMING METHOD AND COMPOSITION
    3.
    发明申请
    PATTERN-FORMING METHOD AND COMPOSITION 审中-公开

    公开(公告)号：US20190235386A1

    公开(公告)日：2019-08-01

    申请号：US16376385

    申请日：2019-04-05

    Applicant: JSR Corporation

    Inventor： Hiroyuki Komatsu ,  Takehiko Naruoka ,  Masafumi Hori ,  Hitoshi Osaki ,  Tomohiro Oda

    IPC: G03F7/11 ,  H01L21/308 ,  H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  C08F112/08 ,  C08F212/08

    Abstract: A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate directly or via other layer. The recessed portions of the base pattern are filled with a first composition to form a filler layer. Phase separation of the filler layer is allowed to form a plurality of phases of the filler layer. A part of the plurality of phases of the filler layer is removed to form a miniaturized pattern. The forming of the base pattern includes: forming a resist pattern on the front face side of the substrate; forming a layer of a second polymer on lateral faces of the resist pattern; and forming a layer of a third polymer that differs from the second polymer on a surface of the substrate or on a surface of the other layer.

    Base film-forming composition, and directed self-assembly lithography method
    4.
    发明授权
    Base film-forming composition, and directed self-assembly lithography method 有权
    基底成膜组合物和定向自组装光刻方法

    公开(公告)号：US09557644B2

    公开(公告)日：2017-01-31

    申请号：US14582703

    申请日：2014-12-24

    Applicant: JSR CORPORATION

    Inventor： Hiroyuki Komatsu ,  Takehiko Naruoka ,  Shinya Minegishi ,  Kaori Sakai ,  Tomoki Nagai

    IPC: H01L21/30 ,  B81C1/00 ,  G03F7/00 ,  G03F7/038 ,  C09D133/06 ,  C09D125/14 ,  G03F7/11

    CPC classification number: C09D125/14 ,  C08F220/14 ,  C09D133/06 ,  C09D133/12 ,  G03F7/0002 ,  G03F7/0388 ,  G03F7/11 ,  C08F2220/325 ,  C08F212/08 ,  C08F2220/1841

    Abstract: A base film-forming composition includes a compound including a group capable of reacting with Si—OH or Si—H, and a solvent. The base film-forming composition is for forming a base film provided between a layer including a silicon atom and a directed self-assembling film in a directed self-assembly lithography process. The receding contact angle of the base film for pure water is no less than 70° and no greater than 90°. The compound is preferably represented by formula (1). In the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200.

    Abstract translation: 基础成膜组合物包括包含能够与Si-OH或Si-H反应的基团的化合物和溶剂。 基底成膜组合物用于在定向自组装光刻工艺中形成设置在包括硅原子的层和定向自组装膜之间的基膜。 纯水基底膜的后退接触角不小于70°，不大于90°。 该化合物优选由式（1）表示。 在式（1）中，A表示具有（m + n）价的连接基团。 D表示具有至少10个碳原子的一价有机基团; E表示能够与Si-OH或Si-H反应的基团; m和n各自独立地为1〜200的整数。

    Pattern-forming method and patterned substrate
    5.
    发明授权
    Pattern-forming method and patterned substrate 有权

    公开(公告)号：US11462405B2

    公开(公告)日：2022-10-04

    申请号：US16597947

    申请日：2019-10-10

    Applicant: JSR CORPORATION

    Inventor： Hiroyuki Komatsu ,  Miki Tamada ,  Hitoshi Osaki ,  Tomoki Nagai

    IPC: G03F7/075 ,  H01L21/033 ,  B81C1/00 ,  G03F7/26 ,  H01L21/308

    Abstract: A pattern-forming method includes forming a prepattern and including a first polymer is formed on a silicon-containing film on a substrate. An underlayer film including a second polymer is formed in recessed portions of the prepattern. A composition for directed self-assembled film formation including a third polymer is applied on the underlayer film and the prepattern. The first polymer includes a first structural unit. The second polymer includes: a molecular chain including the first structural unit and a second structural unit that differs from the first structural unit; and an end structure that bonds to one end of the molecular chain and includes at least one selected from the group consisting of an amino group, a hydroxy group and a carboxy group. The third polymer is a block copolymer including a block of the first structural unit and a block of the second structural unit.

    PATTERN-FORMING METHOD, AND COMPOSITION
    7.
    发明申请
    PATTERN-FORMING METHOD, AND COMPOSITION 审中-公开

    公开(公告)号：US20180342387A1

    公开(公告)日：2018-11-29

    申请号：US16057017

    申请日：2018-08-07

    Applicant: JSR CORPORATION

    Inventor： Hiroyuki Komatsu ,  Tomohiro Oda ,  Masafumi Hori ,  Takehiko Naruoka ,  Tomoki Nagai

    IPC: H01L21/027 ,  G03F7/16 ,  C08F12/08 ,  C08F20/14 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/32 ,  H01L21/768

    Abstract: A pattern-forming method includes: forming a pattern on an upper face side of a substrate; applying a first composition to a sidewall of the pattern; forming a resin layer by applying a second composition to an inner face side of the sidewall of the pattern coated with the first composition; allowing the resin layer to separate into a plurality of phases; and removing at least one of the plurality of phases. The first composition contains a first polymer. The second composition contains a second polymer. The second polymer includes a first block having a first structural unit and a second block having a second structural unit. The polarity of the second structural unit is higher than the polarity of the first structural unit. Immediately before forming of the resin layer, a static contact angle θ (°) of water on the sidewall of the pattern satisfies inequality (1). α ≥ θ ≥ α + β 2 ( 1 )

    Composition for pattern formation, and pattern-forming method
    8.
    发明授权
    Composition for pattern formation, and pattern-forming method 有权
    用于图案形成的组合物和图案形成方法

    公开(公告)号：US09587065B2

    公开(公告)日：2017-03-07

    申请号：US14702139

    申请日：2015-05-01

    Applicant: JSR CORPORATION

    Inventor： Hiroyuki Komatsu ,  Shinya Minegishi ,  Takehiko Naruoka ,  Tomoki Nagai

    IPC: C08F297/02 ,  C08F293/00 ,  G03F7/16 ,  C08L53/00 ,  G03F7/20

    CPC classification number: C08F297/026 ,  C08F293/00 ,  C08L53/00 ,  G03F7/0002 ,  G03F7/039 ,  G03F7/16 ,  G03F7/168 ,  G03F7/20

    Abstract: A composition for pattern formation includes a block copolymer. The block polymer includes a first labile group at an end of a main chain of the block copolymer. The first acid liable group is capable of being dissociated by an acid or heat. The composition preferably further contains an acid generator that generates an acid upon application of an energy. The block copolymer is preferably capable of forming a phase separation structure through directed self-assembly. The first labile group is preferably represented by formula (a). R represents a monovalent organic group having 1 to 20 carbon atoms; R′ represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and * denotes a binding site to an atom at the end of the main chain of the block copolymer.

    Abstract translation: 用于图案形成的组合物包括嵌段共聚物。 嵌段聚合物包括在嵌段共聚物的主链末端的第一不稳定基团。 第一个易酸性基团能够被酸或热解离。 组合物优选还包含在施加能量时产生酸的酸发生剂。 嵌段共聚物优选能够通过定向自组装形成相分离结构。 第一不稳定基团优选由式（a）表示。 R表示碳原子数1〜20的1价有机基团。 R'表示氢原子或碳原子数1〜20的1价有机基团。 和*表示与嵌段共聚物主链末端的原子的结合位点。

    Pattern-forming method
    9.
    发明授权
    Pattern-forming method 有权
    图案形成方法

    公开(公告)号：US09487868B2

    公开(公告)日：2016-11-08

    申请号：US14591323

    申请日：2015-01-07

    Applicant: JSR CORPORATION

    Inventor： Hiroyuki Komatsu ,  Takehiko Naruoka ,  Shinya Minegishi ,  Kaori Sakai ,  Tomoki Nagai

    IPC: C23F1/02 ,  C23F1/12 ,  G03F7/00 ,  H01L21/308 ,  C08F297/02 ,  C09D153/00

    CPC classification number: C23F1/02 ,  C08F297/02 ,  C09D153/00 ,  C23F1/12 ,  G03F7/0002 ,  H01L21/3081 ,  C08L83/04 ,  C08L25/08

    Abstract: A pattern-forming method includes providing a metal-containing film directly or indirectly on a substrate. A directed self-assembling film is provided directly or indirectly on the metal-containing film such that a plurality of phases of the directed self-assembling film is formed. At least a part of the plurality of phases of the directed self-assembling film is removed such that a pattern of the directed self-assembling film is formed. The metal-containing film and the substrate are sequentially etched using the pattern of the directed self-assembling film as a mask.

    Abstract translation: 图案形成方法包括直接或间接地在基底上提供含金属的膜。 直接或间接地在含金属膜上提供定向自组装膜，从而形成定向自组装膜的多个相。 定向自组装膜的多个相的至少一部分被去除，从而形成定向自组装膜的图案。 使用定向自组装膜的图案作为掩模，依次蚀刻含金属膜和基板。

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