Invention Grant
- Patent Title: Enable/disable of memory chunks during memory access
- Patent Title (中): 在内存访问期间启用/禁用内存块
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Application No.: US14725697Application Date: 2015-05-29
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Publication No.: US09536582B2Publication Date: 2017-01-03
- Inventor: Toru Tanzawa , Satoru Tamada , Koichi Kawai , Tetsuji Manabe
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C8/12
- IPC: G11C8/12 ; G11C7/00 ; G11C16/06 ; G11C7/18 ; G11C16/08 ; G11C16/04

Abstract:
Apparatuses and methods involving accessing memory cells are described. In one such method, chunks of memory cells in a memory array are enabled to be accessed and then one or more of the chunks are disabled from being accessed. In one such apparatus, an array includes chunks of memory cells and a chunk selector circuit coupled to each chunk to enable the memory cells in the respective chunk to be accessed. Additional embodiments are described.
Public/Granted literature
- US20150262636A1 ENABLE/DISABLE OF MEMORY CHUNKS DURING MEMORY ACCESS Public/Granted day:2015-09-17
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