Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14875385Application Date: 2015-10-05
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Publication No.: US09536868B2Publication Date: 2017-01-03
- Inventor: Keun-Nam Kim , Sun-Young Park , Soo-Ho Shin , Kye-Hee Yeom , Hyeon-Woo Jang , Jin-Won Jeong , Chang-Hyun Cho , Hyeong-Sun Hong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO, LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO, LTD.
- Current Assignee Address: KR Suwon-Si Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0117910 20121023
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L27/02 ; H01L23/528 ; H01L23/532 ; H01L27/108

Abstract:
A semiconductor device includes a plurality of bit lines that intersect an active region on a substrate and extend in a first direction, a contact pad formed on the active region between adjacent bit lines, and a plurality of spacers disposed on sidewalls of the plurality of bit lines. An upper portion of the contact pad is interposed between adjacent spacers, and a lower portion of the contact pad has a width greater than a distance between adjacent spacers.
Public/Granted literature
- US20160035714A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-02-04
Information query
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