发明授权
- 专利标题： Methods of fabricating three-dimensional semiconductor devices
- 专利标题（中）： 制造三维半导体器件的方法
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申请号： US14657849申请日： 2015-03-13
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公开(公告)号： US09536895B2公开(公告)日： 2017-01-03
- 发明人: Changhyun Lee , Chanjin Park , Byoungkeun Son , Sung-Il Chang
- 申请人： Changhyun Lee , Chanjin Park , Byoungkeun Son , Sung-Il Chang
- 申请人地址： KR Suwon-Si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-Si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2010-0110033 20101105
- 主分类号： H01L27/115
- IPC分类号： H01L27/115
摘要：
A three-dimensional semiconductor device includes an upper structure on a lower structure, the upper structure including conductive patterns, a semiconductor pattern connected to the lower structure through the upper structure, and an insulating spacer between the semiconductor pattern and the upper structure, a bottom surface of the insulating spacer being positioned at a vertical level equivalent to or higher than an uppermost surface of the lower structure.