Invention Grant
- Patent Title: Method for detecting defect in pattern
- Patent Title (中): 检测图案缺陷的方法
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Application No.: US14331899Application Date: 2014-07-15
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Publication No.: US09542740B2Publication Date: 2017-01-10
- Inventor: Ki-Hyun Kim , Kai-Yuan Chi , Dmitry Vengertsev , Seung-Hune Yang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0138475 20131114
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06T7/00

Abstract:
Provided is a method of detecting a defect of a pattern using vectorization to increase accuracy and efficiency in OPC modeling and OPC verification. The method includes acquiring a target layout image associated with a target pattern, acquiring a pattern image associated with a pattern formed on a substrate, extracting an edge image from the pattern image, producing a first vector form based on the target layout image, producing a second vector form based on the edge image, and comparing the first vector form with the second vector form.
Public/Granted literature
- US20150131891A1 METHOD FOR DETECTING DEFECT IN PATTERN Public/Granted day:2015-05-14
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