Invention Grant
- Patent Title: Method for curing flowable layer
- Patent Title (中): 固化流动层的方法
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Application No.: US14564304Application Date: 2014-12-09
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Publication No.: US09543141B2Publication Date: 2017-01-10
- Inventor: Chi-Ming Liao , Ker-Hsun Liao , Chun-Ou Liu , Su-Horng Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/3105
Abstract:
Methods for forming a semiconductor structure are provided. The method for forming a semiconductor structure includes forming a flowable layer over a substrate and heating the flowable layer to form a cured layer in a curing process. In addition, the curing process is performed under a pressure of over 2 atmospheres, and the flowable layer reacts with precursors in the flowable layer during the curing process.
Public/Granted literature
- US20160163540A1 METHOD FOR CURING FLOWABLE LAYER Public/Granted day:2016-06-09
Information query
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