Invention Grant
US09543149B2 High voltage lateral extended drain MOS transistor with improved drift layer contact
有权
具有改善漂移层接触的高电压横向延伸漏极MOS晶体管
- Patent Title: High voltage lateral extended drain MOS transistor with improved drift layer contact
- Patent Title (中): 具有改善漂移层接触的高电压横向延伸漏极MOS晶体管
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Application No.: US14567398Application Date: 2014-12-11
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Publication No.: US09543149B2Publication Date: 2017-01-10
- Inventor: Philip Leland Hower , Sameer Pendharkar , Marie Denison
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L27/105
- IPC: H01L27/105 ; H01L29/66 ; H01L21/225 ; H01L21/266 ; H01L29/78
Abstract:
An integrated circuit and method having an extended drain MOS transistor with a buried drift region, a drain end diffused link between the buried drift region and the drain contact, and a concurrently formed channel end diffused link between the buried drift region and the channel, where the channel end diffused link is formed by implanting through segmented areas to dilute the doping to less than two-thirds the doping in the drain end diffused link.
Public/Granted literature
- US20150171213A1 HIGH VOLTAGE LATERAL EXTENDED DRAIN MOS TRANSISTOR WITH IMPROVED DRIFT LAYER CONTACT Public/Granted day:2015-06-18
Information query
IPC分类:
