Invention Grant
- Patent Title: Systems and methods for forming ultra-shallow junctions
- Patent Title (中): 用于形成超浅结的系统和方法
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Application No.: US14735541Application Date: 2015-06-10
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Publication No.: US09543150B2Publication Date: 2017-01-10
- Inventor: Yunsang Kim , YounGi Hong , Ivan Berry
- Applicant: LAM RESEARCH CORPORATION
- Applicant Address: US CA Fremont
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: US CA Fremont
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/225 ; H01L21/30 ; H01L21/324 ; H01L21/02
Abstract:
A method for forming a junction on a substrate includes removing a native oxide layer of a bulk material; doping an outer layer of the bulk material with molecular hydrogen to create a hydrogen-doped outer layer; and nano-doping the hydrogen-doped outer layer using one of boron or phosphorous to a target junction depth to create a nano-doped layer.
Public/Granted literature
- US20160365251A1 SYSTEMS AND METHODS FOR FORMING ULTRA-SHALLOW JUNCTIONS Public/Granted day:2016-12-15
Information query
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