Invention Grant
- Patent Title: Laminated wafer processing method
- Patent Title (中): 层压晶片加工方法
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Application No.: US14445608Application Date: 2014-07-29
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Publication No.: US09543189B2Publication Date: 2017-01-10
- Inventor: Seiji Harada , Satoshi Kobayashi , Yasuyoshi Yubira
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain Ltd.
- Priority: JP2013-161277 20130802
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L21/302 ; B32B37/18 ; B29C65/16 ; H01L21/762 ; H01L21/268

Abstract:
A method of processing a laminated wafer in which a first wafer is laminated on a second wafer, the method including: a laminated wafer forming step of forming the laminated wafer by laminating the first wafer on the second wafer; a modified layer forming step of forming a modified layer within the first wafer by positioning a focusing point of a laser beam within the first wafer and moving the first wafer in a horizontal direction relative to the focusing point while applying the laser beam, the modified layer forming step being performed before or after the laminated wafer forming step is performed; and a separating step of separating part of the first wafer from the laminated wafer with the modified layer as a boundary, the separating step being performed after the laminated wafer forming step and the modified layer forming step are performed.
Public/Granted literature
- US20150037962A1 LAMINATED WAFER PROCESSING METHOD Public/Granted day:2015-02-05
Information query
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