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    Gettering layer forming method
    1.
    发明授权
    Gettering layer forming method 有权

    公开(公告)号：US10546758B2

    公开(公告)日：2020-01-28

    申请号：US15971538

    申请日：2018-05-04

    Applicant: DISCO CORPORATION

    Inventor： Daigo Shitabo ,  Seiji Harada ,  Hiroki Takeuchi

    IPC: H01L21/322 ,  H01L23/26

    Abstract: A gettering layer forming method includes a coating step of applying a solution of metal salt to a back side of a wafer, and a diffusing step of heating the wafer after performing the coating step, thereby diffusing the metal salt on the back side of the wafer to form a gettering layer containing the metal salt on the back side of the wafer, in which the metal salt is diffused in the gettering layer.

    Laminated wafer processing method
    5.
    发明授权
    Laminated wafer processing method 有权
    层压晶片加工方法

    公开(公告)号：US09543189B2

    公开(公告)日：2017-01-10

    申请号：US14445608

    申请日：2014-07-29

    Applicant: DISCO CORPORATION

    Inventor： Seiji Harada ,  Satoshi Kobayashi ,  Yasuyoshi Yubira

    IPC: H01L21/84 ,  H01L21/302 ,  B32B37/18 ,  B29C65/16 ,  H01L21/762 ,  H01L21/268

    CPC classification number: H01L21/76251 ,  H01L21/268 ,  H01L21/67092

    Abstract: A method of processing a laminated wafer in which a first wafer is laminated on a second wafer, the method including: a laminated wafer forming step of forming the laminated wafer by laminating the first wafer on the second wafer; a modified layer forming step of forming a modified layer within the first wafer by positioning a focusing point of a laser beam within the first wafer and moving the first wafer in a horizontal direction relative to the focusing point while applying the laser beam, the modified layer forming step being performed before or after the laminated wafer forming step is performed; and a separating step of separating part of the first wafer from the laminated wafer with the modified layer as a boundary, the separating step being performed after the laminated wafer forming step and the modified layer forming step are performed.

    Abstract translation: 一种处理层叠晶片的方法，其中第一晶片层叠在第二晶片上，所述方法包括：层叠晶片形成步骤，通过在第二晶片上层叠第一晶片来形成层压晶片; 改进层形成步骤，通过将激光束的聚焦点定位在第一晶片内并在施加激光束的同时相对于聚焦点在水平方向上移动第一晶片，在第一晶片内形成修饰层，改性层 在层叠晶片形成步骤之前或之后进行形成步骤; 以及分离步骤，其中所述第一晶片的一部分与所述层叠晶片以所述改性层作为边界分离，所述分离步骤在进行所述层压晶片形成步骤和所述改性层形成步骤之后进行。

    LAMINATED WAFER PROCESSING METHOD
    6.
    发明申请
    LAMINATED WAFER PROCESSING METHOD 有权
    层压加工方法

    公开(公告)号：US20150037962A1

    公开(公告)日：2015-02-05

    申请号：US14445608

    申请日：2014-07-29

    Applicant: DISCO CORPORATION

    Inventor： Seiji Harada ,  Satoshi Kobayashi ,  Yasuyoshi Yubira

    IPC: H01L21/762 ,  H01L21/268

    CPC classification number: H01L21/76251 ,  H01L21/268 ,  H01L21/67092

    Abstract: A method of processing a laminated wafer in which a first wafer is laminated on a second wafer, the method including: a laminated wafer forming step of forming the laminated wafer by laminating the first wafer on the second wafer; a modified layer forming step of forming a modified layer within the first wafer by positioning a focusing point of a laser beam within the first wafer and moving the first wafer in a horizontal direction relative to the focusing point while applying the laser beam, the modified layer forming step being performed before or after the laminated wafer forming step is performed; and a separating step of separating part of the first wafer from the laminated wafer with the modified layer as a boundary, the separating step being performed after the laminated wafer forming step and the modified layer forming step are performed.

    Abstract translation: 一种处理层叠晶片的方法，其中第一晶片层叠在第二晶片上，所述方法包括：层叠晶片形成步骤，通过在第二晶片上层叠第一晶片来形成层压晶片; 改进层形成步骤，通过将激光束的聚焦点定位在第一晶片内并在施加激光束的同时相对于聚焦点在水平方向上移动第一晶片，在第一晶片内形成修饰层，改性层 在层叠晶片形成步骤之前或之后进行形成步骤; 以及分离步骤，其中所述第一晶片的一部分与所述层叠晶片以所述改性层作为边界分离，所述分离步骤在进行所述层压晶片形成步骤和所述改性层形成步骤之后进行。

    Evaluation method of device wafer
    7.
    发明授权
    Evaluation method of device wafer 有权

    公开(公告)号：US09679820B2

    公开(公告)日：2017-06-13

    申请号：US14752155

    申请日：2015-06-26

    Applicant: DISCO CORPORATION

    Inventor： Naoya Sukegawa ,  Seiji Harada

    IPC: G01N21/55 ,  H01L21/66 ,  G01N21/95

    CPC classification number: H01L22/12 ,  G01N21/9501 ,  G01N2201/06113

    Abstract: An evaluation method of a device wafer on which plural devices are formed on a front surface and inside which a gettering layer is formed is provided. In the evaluation method, electromagnetic waves are radiated toward a back surface of the device wafer and excitation light is radiated to generate excess carriers. Furthermore, the gettering capability of the gettering layer formed in the device wafer is determined based on the damping time of reflected electromagnetic waves.

    Workpiece evaluating method
    8.
    发明授权
    Workpiece evaluating method 有权

    公开(公告)号：US10157802B2

    公开(公告)日：2018-12-18

    申请号：US15461784

    申请日：2017-03-17

    Applicant: DISCO CORPORATION

    Inventor： Naoya Sukegawa ,  Seiji Harada

    IPC: H01L21/00 ,  H01L21/66 ,  H01L21/322 ,  G01N22/02 ,  G01N1/00

    Abstract: A workpiece evaluating method evaluates the gettering property of a device wafer having a plurality of devices formed on the front side of the wafer and having a gettering layer formed inside the wafer. The method includes the steps of applying excitation light for exciting a carrier to the wafer, applying microwaves to a light applied area where the excitation light is applied and also to an area other than the light applied area, measuring the intensity of the microwaves reflected from the light applied area and from the area other than the light applied area, subtracting the intensity of the microwaves reflected from the area other than the light applied area from the intensity of the microwaves reflected from the light applied area to thereby obtain a differential signal, and determining the gettering property of the gettering layer according to the intensity of the differential signal obtained above.

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