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US09543196B2 Methods of fabricating semiconductor devices using nanowires 有权
使用纳米线制造半导体器件的方法

Methods of fabricating semiconductor devices using nanowires
Abstract:
Methods of fabricating a semiconductor device may include forming guide patterns exposing base patterns, forming first nanowires on the base patterns by performing a first nanowire growth process, forming a first molding insulating layer between the first nanowires, forming holes exposing surfaces of the base patterns by removing the nanowires, and forming first electrodes including a conductive material in the holes.
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