Invention Grant
- Patent Title: Methods of fabricating semiconductor devices using nanowires
- Patent Title (中): 使用纳米线制造半导体器件的方法
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Application No.: US14674332Application Date: 2015-03-31
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Publication No.: US09543196B2Publication Date: 2017-01-10
- Inventor: Hyun Park , Dong-Hyun Im , Soon-Gun Lee , Jong-Myeong Lee , Han-Jin Lim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2014-0112589 20140827
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/82 ; H01L21/768 ; B82Y10/00 ; H01L21/02 ; H01L27/108 ; H01L49/02 ; H01L29/41

Abstract:
Methods of fabricating a semiconductor device may include forming guide patterns exposing base patterns, forming first nanowires on the base patterns by performing a first nanowire growth process, forming a first molding insulating layer between the first nanowires, forming holes exposing surfaces of the base patterns by removing the nanowires, and forming first electrodes including a conductive material in the holes.
Public/Granted literature
- US20160064277A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING NANOWIRES Public/Granted day:2016-03-03
Information query
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