Invention Grant
- Patent Title: Long-term heat treated integrated circuit arrangements and methods for producing the same
- Patent Title (中): 长期热处理集成电路布置及其制造方法
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Application No.: US14138241Application Date: 2013-12-23
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Publication No.: US09543199B2Publication Date: 2017-01-10
- Inventor: Oliver Aubel , Wolfgang Hasse , Martina Hommel , Heinrich Koerner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner mbB
- Priority: DE102004021239 20040430
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/532
Abstract:
An explanation is given of, inter alia, methods in which the barrier material is removed at a via bottom or at a via top area by long-term heat treatment. Concurrently or alternatively, interconnects are coated with barrier material in a simple and uncomplicated manner by means of the long-term heat treatment.
Public/Granted literature
- US20160049329A1 Long-term heat treated integrated circuit arrangements and methods for producing the same Public/Granted day:2016-02-18
Information query
IPC分类:
