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US09543202B2 Method of fabricating semiconductor device having contact structures 有权
制造具有接触结构的半导体器件的方法

Method of fabricating semiconductor device having contact structures
Abstract:
Provided is a method of fabricating a semiconductor device, the method including forming interconnection structures extending parallel to each other on a substrate; performing a coating process and forming a liquid state silicon source material layer filling an area between the interconnection structures; performing a first annealing process, curing the liquid state silicon source material layer, and forming an amorphous silicon layer; and crystallizing the amorphous silicon layer and forming contact plugs.
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