Invention Grant
US09543202B2 Method of fabricating semiconductor device having contact structures
有权
制造具有接触结构的半导体器件的方法
- Patent Title: Method of fabricating semiconductor device having contact structures
- Patent Title (中): 制造具有接触结构的半导体器件的方法
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Application No.: US15060641Application Date: 2016-03-04
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Publication No.: US09543202B2Publication Date: 2017-01-10
- Inventor: Jamin Koo , Youngseok Kim , Kongsoo Lee , Goeun Bae
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2015-0084279 20150615
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L21/285 ; H01L23/532 ; H01L21/28

Abstract:
Provided is a method of fabricating a semiconductor device, the method including forming interconnection structures extending parallel to each other on a substrate; performing a coating process and forming a liquid state silicon source material layer filling an area between the interconnection structures; performing a first annealing process, curing the liquid state silicon source material layer, and forming an amorphous silicon layer; and crystallizing the amorphous silicon layer and forming contact plugs.
Public/Granted literature
- US20160365279A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING CONTACT STRUCTURES Public/Granted day:2016-12-15
Information query
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