Invention Grant
- Patent Title: Integrated circuit devices and methods
- Patent Title (中): 集成电路器件及方法
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Application No.: US14819159Application Date: 2015-08-05
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Publication No.: US09543248B2Publication Date: 2017-01-10
- Inventor: Jeffrey Junhao Xu , Junjing Bao , John Jianhong Zhu , Stanley Seungchul Song , Niladri Narayan Mojumder , Choh Fei Yeap
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/532 ; H01L23/528 ; H01L21/768 ; B29C67/00 ; G05B19/418 ; B33Y50/02
Abstract:
An integrated circuit device includes a first metal layer including aluminum. The integrated circuit device includes a second metal layer including an interconnect structure. The interconnect structure includes a layer of first material including aluminum. The integrated circuit device includes an inter-diffusion layer that includes aluminum. The inter-diffusion layer is proximate to the first metal layer and proximate to the layer of first material including aluminum. The integrated circuit device includes a self-forming barrier layer that includes aluminum. The self-forming barrier layer is proximate to a dielectric layer and proximate to the layer of first material including aluminum.
Public/Granted literature
- US20160211216A1 INTEGRATED CIRCUIT DEVICES AND METHODS Public/Granted day:2016-07-21
Information query
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