发明授权
- 专利标题： Group III nitride wafer and its production method
- 专利标题（中）： III族氮化物晶圆及其制作方法
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申请号： US13834871申请日： 2013-03-15
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公开(公告)号： US09543393B2公开(公告)日： 2017-01-10
- 发明人: Tadao Hashimoto , Edward Letts , Sierra Hoff
- 申请人： SixPoint Materials, Inc. , Seoul Semiconductor Co., Ltd.
- 申请人地址： US CA Buellton KR Seoul
- 专利权人： SixPoint Materials, Inc.,Seoul Semiconductor Co., Ltd.
- 当前专利权人： SixPoint Materials, Inc.,Seoul Semiconductor Co., Ltd.
- 当前专利权人地址： US CA Buellton KR Seoul
- 代理机构： Strategic Innovation IP Law Offices, P.C.
- 主分类号： H01L29/201
- IPC分类号： H01L29/201 ; H01L29/20 ; C30B7/10 ; C30B29/40 ; C30B33/10 ; H01L21/02 ; C30B33/00
摘要：
The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.
公开/授权文献
- US20140061662A1 GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD 公开/授权日：2014-03-06
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