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公开(公告)号：US20240309554A1
公开(公告)日：2024-09-19
申请号：US18576900
申请日：2022-07-05
摘要： A single crystal CVD diamond component and a method of fabricating the single crystal CVD diamond component. The single crystal CVD diamond component comprises a surface, wherein at least a portion of the surface has been processed by chemical mechanical polishing, CMP, and a layer of quantum spin defects, said layer of quantum spin defects being disposed within 500 nm of the surface.
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公开(公告)号：US12054851B2
公开(公告)日：2024-08-06
申请号：US18117669
申请日：2023-03-06
申请人： AXT, Inc.
发明人： Morris Young , Weiguo Liu , Wen Wan Zhou , Sungnee George Chu , Wei Zhang
CPC分类号： C30B29/64 , C30B11/002 , C30B11/003 , C30B11/006 , C30B11/14 , C30B29/40 , C30B33/10 , H01L29/20
摘要： Methods and wafers for low etch pit density, low slip line density, and low strain indium phosphide are disclosed and may include an indium phosphide single crystal wafer having a diameter of 4 inches or greater, having a measured etch pit density of less than 500 cm−2, and having fewer than 5 dislocations or slip lines as measured by x-ray diffraction imaging. The wafer may have a measured etch pit density of 200 cm−2 or less, or 100 cm−2 or less, or 10 cm−2 or less. The wafer may have a diameter of 6 inches or greater. An area of the wafer with a measured etch pit density of zero may at least 80% of the total area of the surface. An area of the wafer with a measured etch pit density of zero may be at least 90% of the total area of the surface.
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公开(公告)号：US12049711B2
公开(公告)日：2024-07-30
申请号：US16973706
申请日：2019-05-20
发明人： Koji Onomitsu , Kazuyuki Hirama
IPC分类号： C30B23/02 , C23C16/27 , C23C16/34 , C30B25/18 , C30B29/04 , C30B29/40 , C30B29/68 , C30B33/10
CPC分类号： C30B29/68 , C23C16/27 , C23C16/342 , C30B23/025 , C30B25/183 , C30B29/04 , C30B29/403 , C30B33/10
摘要： A material composed of an element having no catalytic action is epitaxially grown on a nickel layer to form a material layer. For example, iridium is epitaxially grown to form the material layer. Next, a cubic crystal is epitaxially grown on the material layer to form a crystal layer, and a laminate structure including the material layer and the crystal layer is patterned to form a vibrator shape part. The thickness of the material layer is controlled within a range in which lattice relaxation is not complete.
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公开(公告)号：US11894225B2
公开(公告)日：2024-02-06
申请号：US17289524
申请日：2020-06-04
发明人： Shunsuke Oka , Hideki Kurita , Kenji Suzuki
CPC分类号： H01L21/02019 , B28D5/042 , C30B25/186 , C30B29/40 , C30B33/10 , H01L29/20
摘要： Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a BOW value of −2.0 to 2.0 μm, as measured with the back surface of the indium phosphide substrate facing upward.
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公开(公告)号：US11859312B2
公开(公告)日：2024-01-02
申请号：US18022417
申请日：2022-08-17
申请人： TOKUYAMA CORPORATION
发明人： Masayuki Fukuda , Reo Yamamoto
摘要： Provided are a method of cleaning a group III nitride single crystal substrate which enables the roughness of a nitrogen-polar face of the group III nitride single crystal substrate to be suppressed to remove foreign substances, and a method of producing a group III nitride single crystal substrate. The method of cleaning a group III nitride single crystal substrate having a group III element-polar face, and the nitrogen-polar face opposite the group III element-polar face includes: cleaning the nitrogen-polar face with a detergent including a fluoroorganic compound.
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公开(公告)号：US20230357957A1
公开(公告)日：2023-11-09
申请号：US17780702
申请日：2020-11-10
发明人： Kyoko OKITA , Tsubasa HONKE , Shunsaku UETA
IPC分类号： C30B29/36 , H01L29/16 , H01L29/34 , H01L21/306 , C30B33/10 , C01B32/956
CPC分类号： C30B29/36 , H01L29/1608 , H01L29/34 , H01L21/30625 , C30B33/10 , C01B32/956 , C01P2006/80
摘要： A silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The silicon carbide substrate includes screw dislocations and pits having a maximum diameter of 1 μm or more and 10 μm or less in a direction parallel to the first main surface. When the screw dislocations and the pits are observed in the first main surface, a percentage obtained by dividing a number of the pits by a number of the screw dislocations is 1% or less. A concentration of magnesium in the first main surface is less than 1×1011 atoms/cm2.
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公开(公告)号：US11788203B2
公开(公告)日：2023-10-17
申请号：US17289455
申请日：2020-06-04
发明人： Shunsuke Oka , Hideki Kurita , Kenji Suzuki
CPC分类号： C30B25/186 , C30B29/403 , C30B33/10 , H01L21/02019 , H01L21/02021 , H01L21/02024
摘要： Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a SORI value of 2.5 μm or less, as measured with the back surface of the indium phosphide substrate facing upward.
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公开(公告)号：US20230317444A1
公开(公告)日：2023-10-05
申请号：US18331719
申请日：2023-06-08
发明人： Wenkan JIANG , Mark P. D'EVELYN , Derrick S. KAMBER , Dirk EHRENTRAUT , Jonathan D. COOK , James WENGER
CPC分类号： H01L21/02005 , H01L21/02647 , H01L21/02642 , H01L21/0254 , C30B7/105 , C30B33/10 , C30B7/005 , C30B29/406 , H01L29/7788
摘要： Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.
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9.发明公开公开(公告)号：US20230160099A1
公开(公告)日：2023-05-25
申请号：US17988326
申请日：2022-11-16
发明人： Richard S. Kim , Jeung Hun Park
摘要： Methods and systems are provided for a homogenous, single crystal, electrically conductive, and narrow bandgap PbSe nanostructure is synthesized using a chemical bath deposition on, for example, quartz substrates, and includes a tunable iodine doping process to select the size and/or shape of the nanostructures. The single crystalline PbSe nanostructure can be exposed following an isolation process (e.g., etching process), and the concentration and/or distribution of iodine across multiple PbSe nanostructures (e.g., on a quartz substrate) can be adjusted during post processing steps, including heat treatments.
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公开(公告)号：US20220310382A1
公开(公告)日：2022-09-29
申请号：US17289524
申请日：2020-06-04
发明人： Shunsuke OKA , Hideki KURITA , Kenji SUZUKI
摘要： Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a BOW value of −2.0 to 2.0 μm, as measured with the back surface of the indium phosphide substrate facing upward.
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