Invention Grant
US09543397B2 Backside source-drain contact for integrated circuit transistor devices and method of making same
有权
用于集成电路晶体管器件的背面源极 - 漏极触点及其制造方法
- Patent Title: Backside source-drain contact for integrated circuit transistor devices and method of making same
- Patent Title (中): 用于集成电路晶体管器件的背面源极 - 漏极触点及其制造方法
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Application No.: US14931078Application Date: 2015-11-03
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Publication No.: US09543397B2Publication Date: 2017-01-10
- Inventor: Walter Kleemeier , John Hongguang Zhang
- Applicant: STMicroelectronics, Inc.
- Applicant Address: US TX Coppell
- Assignee: STMICROELECTRONICS, INC.
- Current Assignee: STMICROELECTRONICS, INC.
- Current Assignee Address: US TX Coppell
- Agency: Gardere Wynne Sewell, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/417 ; H01L29/786 ; H01L27/12 ; H01L21/84 ; H01L29/49
Abstract:
An integrated circuit transistor is formed on and in a substrate. A trench in the substrate is at least partially filed with a metal material to form a source (or drain) contact buried in the substrate. The substrate further includes a source (or drain) region epitaxially grown above the source (or drain) contact. The substrate further includes a channel region adjacent to the source (or drain) region. A gate dielectric is provided on top of the channel region and a gate electrode is provided on top of the gate dielectric. The substrate is preferably of the silicon on insulator (SOI) type.
Public/Granted literature
- US20160056249A1 BACKSIDE SOURCE-DRAIN CONTACT FOR INTEGRATED CIRCUIT TRANSISTOR DEVICES AND METHOD OF MAKING SAME Public/Granted day:2016-02-25
Information query
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