Invention Grant
- Patent Title: Oxide sputtering target, and thin film transistor using the same
- Patent Title (中): 氧化物溅射靶和使用其的薄膜晶体管
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Application No.: US14487916Application Date: 2014-09-16
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Publication No.: US09543444B2Publication Date: 2017-01-10
- Inventor: Katsushi Kishimoto , Yoshinori Tanaka , Yeon Keon Moon , Sang Woo Sohn , Sang Won Shin , Takayuki Fukasawa
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2014-0026722 20140306
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/26 ; H01J37/34
Abstract:
An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.
Public/Granted literature
- US20150255611A1 OXIDE SPUTTERING TARGET, AND THIN FILM TRANSISTOR USING THE SAME Public/Granted day:2015-09-10
Information query
IPC分类:
