Invention Grant
US09548136B2 Method to identify extrinsic SRAM bits for failure analysis based on fail count voltage response 有权
基于故障计数电压响应来识别用于故障分析的外部SRAM位的方法

Method to identify extrinsic SRAM bits for failure analysis based on fail count voltage response
Abstract:
A method and an apparatus for identifying non-intrinsic defect bits from a population of failing bits for failure analysis to characterize the extrinsic failure mechanisms is provided. Embodiments include performing a failure mode test on a bank of a memory array at different low VDD; determining optimal bank size to observe plateaus of fail counts; determining fail counts of the bank at each different low VDD; determining a plateau of the fail counts; determining whether the plateau represents extrinsic bits of the bank; and submitting the extrinsic bits for root cause analysis.
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