Invention Grant
US09548136B2 Method to identify extrinsic SRAM bits for failure analysis based on fail count voltage response
有权
基于故障计数电压响应来识别用于故障分析的外部SRAM位的方法
- Patent Title: Method to identify extrinsic SRAM bits for failure analysis based on fail count voltage response
- Patent Title (中): 基于故障计数电压响应来识别用于故障分析的外部SRAM位的方法
-
Application No.: US14664959Application Date: 2015-03-23
-
Publication No.: US09548136B2Publication Date: 2017-01-17
- Inventor: Vivek Joshi , Sriram Balasubramanian , Chad Weintraub , Yoann Mamy Randriamihaja , William McMahon
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/04 ; G11C11/419

Abstract:
A method and an apparatus for identifying non-intrinsic defect bits from a population of failing bits for failure analysis to characterize the extrinsic failure mechanisms is provided. Embodiments include performing a failure mode test on a bank of a memory array at different low VDD; determining optimal bank size to observe plateaus of fail counts; determining fail counts of the bank at each different low VDD; determining a plateau of the fail counts; determining whether the plateau represents extrinsic bits of the bank; and submitting the extrinsic bits for root cause analysis.
Public/Granted literature
- US20160284421A1 METHOD TO IDENTIFY EXTRINSIC SRAM BITS FOR FAILURE ANALYSIS BASED ON FAIL COUNT VOLTAGE RESPONSE Public/Granted day:2016-09-29
Information query