Invention Grant
US09548181B2 Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
有权
含硼掺杂剂组合物，其用于改善离子束电流的系统和方法以及硼离子注入期间的性能
- Patent Title: Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
- Patent Title (中): 含硼掺杂剂组合物，其用于改善离子束电流的系统和方法以及硼离子注入期间的性能
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Application No.: US14982544Application Date: 2015-12-29
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Publication No.: US09548181B2Publication Date: 2017-01-17
- Inventor: Ashwini K. Sinha , Stanley M. Smith , Douglas C. Heiderman , Serge M. Campeau
- Applicant: Ashwini K. Sinha , Stanley M. Smith , Douglas C. Heiderman , Serge M. Campeau
- Applicant Address: US CT Danbury
- Assignee: PRAXAIR TECHNOLOGY, INC.
- Current Assignee: PRAXAIR TECHNOLOGY, INC.
- Current Assignee Address: US CT Danbury
- Agent Nilay S. Dalal
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01J27/22 ; H01J37/08
Abstract:
A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.
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