Invention Grant
US09548217B2 Etching method of semiconductor substrate, and method of producing semiconductor device
有权
半导体衬底的蚀刻方法以及半导体器件的制造方法
- Patent Title: Etching method of semiconductor substrate, and method of producing semiconductor device
- Patent Title (中): 半导体衬底的蚀刻方法以及半导体器件的制造方法
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Application No.: US14711070Application Date: 2015-05-13
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Publication No.: US09548217B2Publication Date: 2017-01-17
- Inventor: Naotsugu Muro , Tetsuya Kamimura , Tadashi Inaba , Atsushi Mizutani
- Applicant: FUJIFILM CORPORATION
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-250364 20121114
- Main IPC: H01L21/461
- IPC: H01L21/461 ; H01L21/3213 ; H01L21/311 ; C09K13/08
Abstract:
An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.
Public/Granted literature
- US20150243527A1 ETCHING METHOD OF SEMICONDUCTOR SUBSTRATE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE Public/Granted day:2015-08-27
Information query
IPC分类:
