发明授权
US09548217B2 Etching method of semiconductor substrate, and method of producing semiconductor device
有权
半导体衬底的蚀刻方法以及半导体器件的制造方法
- 专利标题： Etching method of semiconductor substrate, and method of producing semiconductor device
- 专利标题（中）： 半导体衬底的蚀刻方法以及半导体器件的制造方法
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申请号： US14711070申请日： 2015-05-13
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公开(公告)号： US09548217B2公开(公告)日： 2017-01-17
- 发明人: Naotsugu Muro , Tetsuya Kamimura , Tadashi Inaba , Atsushi Mizutani
- 申请人： FUJIFILM CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： FUJIFILM Corporation
- 当前专利权人： FUJIFILM Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2012-250364 20121114
- 主分类号： H01L21/461
- IPC分类号： H01L21/461 ; H01L21/3213 ; H01L21/311 ; C09K13/08
摘要：
An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.
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