A carrier structure is provided, which includes: a metal oxide plate having opposite first and second surfaces and a plurality of through holes penetrating the first and second surfaces; a plurality of conductive portions formed in the through holes, respectively; and a plurality of conductive pads formed on the first surface of the metal oxide plate, wherein each of the conductive pads is correspondingly positioned on and in contact with a plurality of the conductive portions so as to be electrically connected to the plurality of the conductive portions. By replacing a conventional silicon interposer with the metal oxide plate, the present invention eliminates the need to form through silicon vias as required in the prior art and therefore simplifies the fabrication process.