Invention Grant
- Patent Title: III-nitride based ESD protection device
- Patent Title (中): 基于III族氮化物的ESD保护器件
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Application No.: US14180980Application Date: 2014-02-14
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Publication No.: US09548293B2Publication Date: 2017-01-17
- Inventor: Hubert Werthmann
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L27/02 ; H01L29/66 ; H01L29/868 ; H01L29/20
Abstract:
An ESD (electrostatic discharge) protection device includes a first III-nitride p-i-n diode and a second III-nitride p-i-n diode connected to the first III-nitride p-i-n diode in an antiparallel arrangement configured to provide voltage clamping at 5V or less under forward bias of either the first or second III-nitride p-i-n diode for transient current in both forward and reverse directions. A corresponding method of manufacturing the ESD protection device is also provided.
Public/Granted literature
- US20150236008A1 III-Nitride Based ESD Protection Device Public/Granted day:2015-08-20
Information query
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