发明授权
- 专利标题： III-nitride based ESD protection device
- 专利标题（中）： 基于III族氮化物的ESD保护器件
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申请号： US14180980申请日： 2014-02-14
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公开(公告)号： US09548293B2公开(公告)日： 2017-01-17
- 发明人: Hubert Werthmann
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 主分类号： H01L23/62
- IPC分类号： H01L23/62 ; H01L27/02 ; H01L29/66 ; H01L29/868 ; H01L29/20
摘要：
An ESD (electrostatic discharge) protection device includes a first III-nitride p-i-n diode and a second III-nitride p-i-n diode connected to the first III-nitride p-i-n diode in an antiparallel arrangement configured to provide voltage clamping at 5V or less under forward bias of either the first or second III-nitride p-i-n diode for transient current in both forward and reverse directions. A corresponding method of manufacturing the ESD protection device is also provided.
公开/授权文献
- US20150236008A1 III-Nitride Based ESD Protection Device 公开/授权日：2015-08-20
信息查询
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