发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US14959209申请日: 2015-12-04
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公开(公告)号: US09548316B2公开(公告)日: 2017-01-17
- 发明人: Joon-Sung Lim , Jang-Gn Yun , Sunghoon Bae , Jaesun Yun , Kyu-Baik Chang
- 申请人: Joon-Sung Lim , Jang-Gn Yun , Sunghoon Bae , Jaesun Yun , Kyu-Baik Chang
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2014-0175816 20141209
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L27/115 ; H01L27/06
摘要:
A semiconductor device includes a logic structure including a logic circuit disposed in a circuit region and a lower insulation covering the logic circuit, a memory structure on the logic structure, a stress relaxation structure interposed between the logic structure and the memory structure in the circuit region, and a connection structure electrically connecting the memory structure to the logic circuit along a conductive path that extends through a connection region of the device beside the circuit region.
公开/授权文献
- US20160163730A1 SEMICONDUCTOR DEVICE 公开/授权日:2016-06-09
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