Invention Grant
US09548321B2 Method of manufacturing thin film transistor (TFT) array substrate
有权
制造薄膜晶体管(TFT)阵列基板的方法
- Patent Title: Method of manufacturing thin film transistor (TFT) array substrate
- Patent Title (中): 制造薄膜晶体管(TFT)阵列基板的方法
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Application No.: US14677081Application Date: 2015-04-02
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Publication No.: US09548321B2Publication Date: 2017-01-17
- Inventor: June-Woo Lee , Jae-Beom Choi , Kwan-Wook Jung , Jae-Hwan Oh , Seong-Hyun Jin , Kwang-Hae Kim , Jong-Hyun Choi
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-do
- Assignee: SAMSUNG DISPLAY CO., LTD
- Current Assignee: SAMSUNG DISPLAY CO., LTD
- Current Assignee Address: KR Yongin, Gyeonggi-do
- Agency: Lee & Morse P.C.
- Priority: KR10-2011-0070027 20110714
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L27/12 ; H01L27/32 ; H01L51/52 ; H01L29/66

Abstract:
A thin film transistor (TFT) array substrate is provided that includes a TFT on a substrate. The TFT can include an active layer, gate electrode, source electrode, drain electrode, first insulating layer between the active layer and the gate electrode, and second insulating layer between the gate electrode and the source and drain electrodes. A pixel electrode is disposed on the first and second insulating layers. A capacitor including a lower electrode is disposed on a same layer as the gate electrode and an upper electrode. A third insulating layer directly between the second insulating layer and the pixel electrode and between the lower electrode and the upper electrode. A fourth insulating layer covers the source electrode, the drain electrode, and the upper electrode, and exposes the pixel electrode and can further expose a pad electrode.
Public/Granted literature
- US20150214252A1 METHOD OF MANUFACTURING THIN FILM TRANSISTOR (TFT) ARRAY SUBSTRATE Public/Granted day:2015-07-30
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