Thin-film transistor substrate having overlapping thin-film transistor

    公开(公告)号:US11075221B2

    公开(公告)日:2021-07-27

    申请号:US16853485

    申请日:2020-04-20

    摘要: A thin-film transistor substrate may include a first thin-film transistor and a second thin-film transistor which are disposed on a substrate. The first thin-film transistor may include a first semiconductor layer, a first gate electrode, and a first electrode. The second thin-film transistor may include a second semiconductor layer disposed on the first semiconductor layer and overlapping at least a portion of the first semiconductor layer, a second gate electrode, and a second electrode electrically connected to the first electrode. The second electrode may overlap the first electrode.

    Thin-film transistor substrate
    2.
    发明授权

    公开(公告)号:US10658393B2

    公开(公告)日:2020-05-19

    申请号:US15833757

    申请日:2017-12-06

    摘要: A thin-film transistor substrate may include a first thin-film transistor and a second thin-film transistor which are disposed on a substrate. The first thin-film transistor may include a first semiconductor layer, a first gate electrode, and a first electrode. The second thin-film transistor may include a second semiconductor layer disposed on the first semiconductor layer and overlapping at least a portion of the first semiconductor layer, a second gate electrode, and a second electrode electrically connected to the first electrode. The second electrode may overlap the first electrode.

    Thin film transistor array substrate and method of manufacturing the same
    3.
    发明授权
    Thin film transistor array substrate and method of manufacturing the same 有权
    薄膜晶体管阵列基板及其制造方法

    公开(公告)号:US09502442B2

    公开(公告)日:2016-11-22

    申请号:US14513476

    申请日:2014-10-14

    摘要: A thin film transistor array substrate and a method of manufacturing the thin film transistor array substrate are provided. The thin film transistor array substrate may include: a substrate; a thin film transistor (TFT) including an active layer, a gate electrode, a source electrode, and a drain electrode on the substrate. The gate electrode may include a bottom gate electrode and a top gate electrode that covers upper and lateral surfaces of the bottom gate electrode.

    摘要翻译: 提供薄膜晶体管阵列基板和制造薄膜晶体管阵列基板的方法。 薄膜晶体管阵列基板可以包括:基板; 在基板上包括有源层,栅电极,源电极和漏电极的薄膜晶体管(TFT)。 栅电极可以包括底栅电极和覆盖底栅电极的上表面和侧表面的顶栅电极。

    ORGANIC LIGHT EMITTING DISPLAY DEVICE
    4.
    发明申请
    ORGANIC LIGHT EMITTING DISPLAY DEVICE 有权
    有机发光显示装置

    公开(公告)号:US20160253017A1

    公开(公告)日:2016-09-01

    申请号:US15149759

    申请日:2016-05-09

    IPC分类号: G06F3/041 H01L27/32 G06F3/044

    摘要: An organic light emitting display device having an electrostatic capacitive type touch panel function with reduced thickness and improved luminance. A display panel of the organic light emitting display device includes a substrate, a display unit having a plurality of pixels on the substrate, and a touch sensing unit on the display unit. The touch sensing unit includes an encapsulation substrate and a capacitive pattern layer on a side of the encapsulation substrate facing the display unit. The capacitive pattern layer has a plurality of openings corresponding in position to the plurality of pixels.

    摘要翻译: 一种具有静电电容型触摸面板功能的有机发光显示装置,具有减小的厚度和改善的亮度。 有机发光显示装置的显示面板包括基板,在基板上具有多个像素的显示单元和显示单元上的触摸感测单元。 触摸感测单元包括封装基板和位于封装基板的面向显示单元的一侧的电容图案层。 电容图案层具有对应于多个像素的位置的多个开口。

    Organic light-emitting display apparatus and method of manufacturing the same
    5.
    发明授权
    Organic light-emitting display apparatus and method of manufacturing the same 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US09425419B2

    公开(公告)日:2016-08-23

    申请号:US13965179

    申请日:2013-08-12

    摘要: Provided is an organic light-emitting display apparatus including a substrate; and a plurality of pixels on the substrate, wherein each of the pixels comprise: an organic light-emitting device comprising a first electrode, a second electrode, and an intermediate layer between the first electrode and the second electrode, wherein the intermediate layer comprises an organic emission layer; a driving transistor configured to drive the organic light-emitting device; and a switching transistor electrically coupled to the driving transistor, wherein the gate electrode of the driving transistor comprises a first conductive layer, and a second conductive layer between the first conductive layer and the active layer of the driving transistor and has a smaller size than the first conductive layer, and the gate electrode of the switching transistor comprises a same material as the first conductive layer.

    摘要翻译: 提供一种包括基板的有机发光显示装置; 以及所述基板上的多个像素,其中每个所述像素包括:有机发光器件,其包括第一电极,第二电极和在所述第一电极和所述第二电极之间的中间层,其中所述中间层包括 有机发射层; 配置为驱动有机发光器件的驱动晶体管; 以及电耦合到所述驱动晶体管的开关晶体管,其中所述驱动晶体管的栅电极包括第一导电层,以及在所述第一导电层和所述驱动晶体管的有源层之间的第二导电层,并且具有比所述驱动晶体管更小的尺寸 第一导电层,并且开关晶体管的栅电极包括与第一导电层相同的材料。

    Method of manufacturing an organic light-emitting display device
    6.
    发明授权
    Method of manufacturing an organic light-emitting display device 有权
    制造有机发光显示装置的方法

    公开(公告)号:US09184222B2

    公开(公告)日:2015-11-10

    申请号:US14632772

    申请日:2015-02-26

    摘要: An organic light-emitting display device including a TFT comprising an active layer, a gate electrode comprising a lower gate electrode and an upper gate electrode, and source and drain electrodes insulated from the gate electrode and contacting the active layer; an organic light-emitting device electrically connected to the TFT and comprising a pixel electrode formed in the same layer as where the lower gate electrode is formed; and a pad electrode electrically coupled to the TFT or the organic light emitting device and comprising a first pad electrode formed in the same layer as in which the lower gate electrode is formed, a second pad electrode formed in the same layer as in which the upper gate electrode is formed, and a third pad electrode comprising a transparent conductive oxide, the first, second, and third pad electrodes being sequentially stacked.

    摘要翻译: 一种有机发光显示装置,包括:TFT,包括有源层,包括下栅电极和上栅电极的栅电极,以及与栅电极绝缘并接触有源层的源电极和漏电极; 电连接到TFT并且包括形成在与形成下栅电极的层相同的层中的像素电极的有机发光器件; 以及焊接电极,其电耦合到所述TFT或所述有机发光器件,并且包括形成在与形成所述下部栅电极的层相同的层中的第一焊盘电极,形成在与所述下部栅电极相同的层中的第二焊盘电极, 形成栅电极,并且包括透明导电氧化物的第三焊盘电极,第一焊盘电极和第三焊盘电极依次层叠。

    Method of manufacturing thin film transistor (TFT) array substrate
    8.
    发明授权
    Method of manufacturing thin film transistor (TFT) array substrate 有权
    制造薄膜晶体管(TFT)阵列基板的方法

    公开(公告)号:US09548321B2

    公开(公告)日:2017-01-17

    申请号:US14677081

    申请日:2015-04-02

    摘要: A thin film transistor (TFT) array substrate is provided that includes a TFT on a substrate. The TFT can include an active layer, gate electrode, source electrode, drain electrode, first insulating layer between the active layer and the gate electrode, and second insulating layer between the gate electrode and the source and drain electrodes. A pixel electrode is disposed on the first and second insulating layers. A capacitor including a lower electrode is disposed on a same layer as the gate electrode and an upper electrode. A third insulating layer directly between the second insulating layer and the pixel electrode and between the lower electrode and the upper electrode. A fourth insulating layer covers the source electrode, the drain electrode, and the upper electrode, and exposes the pixel electrode and can further expose a pad electrode.

    摘要翻译: 提供了一种在基板上包括TFT的薄膜晶体管(TFT)阵列基板。 TFT可以包括有源层,栅电极,源电极,漏电极,有源层和栅电极之间的第一绝缘层,以及栅电极和源电极和漏电极之间的第二绝缘层。 像素电极设置在第一和第二绝缘层上。 包括下电极的电容器设置在与栅电极和上电极相同的层上。 直接在第二绝缘层和像素电极之间以及下电极和上电极之间的第三绝缘层。 第四绝缘层覆盖源电极,漏电极和上电极,并且使像素电极露出,并且可以进一步暴露焊盘电极。

    FLAT PANEL DISPLAY APPARATUS AND METHOD FOR MANUFACTURING THE FLAT PANEL DISPLAY APPARATUS
    9.
    发明申请
    FLAT PANEL DISPLAY APPARATUS AND METHOD FOR MANUFACTURING THE FLAT PANEL DISPLAY APPARATUS 有权
    平板显示装置和制造平板显示装置的方法

    公开(公告)号:US20140353669A1

    公开(公告)日:2014-12-04

    申请号:US14061359

    申请日:2013-10-23

    IPC分类号: H01L27/12

    CPC分类号: H01L27/124 H01L27/1259

    摘要: A display apparatus includes an active layer that overlaps a substrate and comprises a channel region. The display apparatus further includes an insulating layer disposed on the substrate and the active layer. The display apparatus further includes a gate electrode disposed on the insulating layer, overlapping the channel region, and comprising a first gate electrode layer and a second gate electrode layer, wherein the first gate electrode layer is formed of a first material and is disposed between the insulating layer and the second electrode layer, and wherein the second gate electrode layer is formed of a second material that is different from the first material. The display apparatus further includes a contact portion disposed on the insulating layer and comprising a first contact layer that is formed of the first material. The display apparatus further includes a pixel electrode that contacts the first contact layer.

    摘要翻译: 显示装置包括与衬底重叠并包括沟道区的有源层。 显示装置还包括设置在基板和有源层上的绝缘层。 显示装置还包括设置在绝缘层上的栅电极,与沟道区重叠,并且包括第一栅电极层和第二栅极电极层,其中第一栅极电极层由第一材料形成, 绝缘层和第二电极层,并且其中第二栅电极层由与第一材料不同的第二材料形成。 显示装置还包括设置在绝缘层上并包括由第一材料形成的第一接触层的接触部分。 显示装置还包括与第一接触层接触的像素电极。