Invention Grant
- Patent Title: Imaging device having a selenium containing photoelectric conversion layer
- Patent Title (中): 具有含硒光电转换层的成像装置
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Application No.: US14928987Application Date: 2015-10-30
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Publication No.: US09548327B2Publication Date: 2017-01-17
- Inventor: Hiroki Inoue , Yoshiyuki Kurokawa , Takayuki Ikeda , Yuki Okamoto
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2014-227703 20141110
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146 ; H04N5/3745 ; H04N5/378

Abstract:
To provide an imaging device capable of obtaining high-quality imaging data. The imaging device includes a first circuit and a second circuit. The first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first capacitor, a second capacitor, and a third capacitor. The second circuit includes a seventh transistor. The imaging device can compensate variation in electrical characteristics of an amplifier transistor included in the first circuit.
Public/Granted literature
- US20160133660A1 IMAGING DEVICE AND ELECTRONIC DEVICE Public/Granted day:2016-05-12
Information query
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