Invention Grant
US09548327B2 Imaging device having a selenium containing photoelectric conversion layer 有权
具有含硒光电转换层的成像装置

Imaging device having a selenium containing photoelectric conversion layer
Abstract:
To provide an imaging device capable of obtaining high-quality imaging data. The imaging device includes a first circuit and a second circuit. The first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first capacitor, a second capacitor, and a third capacitor. The second circuit includes a seventh transistor. The imaging device can compensate variation in electrical characteristics of an amplifier transistor included in the first circuit.
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